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Atomically Defined Templates for Epitaxial Growth of Complex Oxide Thin Films
Published on: December 4, 2014
Highly improved uniformity in the resistive switching parameters of TiO2 thin films by inserting Ru nanodots
Jung Ho Yoon1, Jeong Hwan Han, Ji Sim Jung
1WCU Hybrid Materials Program, Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul, Korea.
Advanced Materials (Deerfield Beach, Fla.)
|February 7, 2013
Abstract:
Limiting the location where electron injection occurs at the cathode interface to a narrower region is the key factor for achieving a highly improved RS performance, which can be achieved by including Ru Nanodots. The development of a memory cell structure truly at the nanoscale with such a limiting factor for the electric-field distribution can solve the non-uniformity issue of future ReRAM.
