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SeungNam Cha

Showing results (1-10 of 49) with videos related to

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ACS Nano|September 23, 2025
Recent Contact Strategies for Two-Dimensional ElectronicsSangyeon Pak, John Hong, SeungNam Cha
Nanotechnology|April 15, 2022
Shift of switching threshold in low-dimensional semiconductor-based complementary inverters via inkjet printingSeoyeon Jung, Jihyun Lee, Juhee Park, et al.
Nanotechnology|January 12, 2018
Field effect transistors and phototransistors based upon p-type solution-processed PbS nanowiresPaul Giraud, Bo Hou, Sangyeon Pak, et al.
ACS Applied Materials & Interfaces|March 11, 2022
Electromagnetic Interference Shielding with 2D Copper SulfideTaehun Kim, Sangyeon Pak, Jungmoon Lim, et al.
ACS Applied Materials & Interfaces|January 17, 2025
Mixed-Dimensional Semiconductors-Based Ternary Circuits with Tunable Negative Transconductance CharacteristicsHye Young Lee, Young-Ju Oh, Eunseo Joo, et al.
Nanoscale|September 24, 2013
Solution-processed Ag-doped ZnO nanowires grown on flexible polyester for nanogenerator applicationsSangHyo Lee, JunSeok Lee, WonBae Ko, et al.
Nanotechnology|May 3, 2014
Tunable threshold voltage of an n-type Si nanowire ferroelectric-gate field effect transistor for high-performance nonvolatile memory applicationsNgoc Huynh Van, Jae-Hyun Lee, Jung Inn Sohn, et al.
Advanced Materials (Deerfield Beach, Fla.)|August 12, 2011
P-type conduction characteristics of lithium-doped ZnO nanowiresJunseok Lee, Seungnam Cha, Jongmin Kim, et al.
ACS Applied Materials & Interfaces|January 22, 2025
Study of High Performance Nanoscale Channel Length Vertical Transistors with a Self-Aligned Blocking LayerGoeun Pyo, Su Jin Heo, Dongsu Kim, et al.
Nanoscale|September 2, 2025
Non-volatile resistive switching characteristics in Cu<sub>2-<i>x</i></sub>S-based memristorSeungsub Lee, Junsung Byeon, Sohyeon Park, et al.
Pageof 5

Showing results (1-10 of 49) with videos related to

Sort By:
Pageof 5
ACS Nano|September 23, 2025
Recent Contact Strategies for Two-Dimensional ElectronicsSangyeon Pak, John Hong, SeungNam Cha
Nanotechnology|April 15, 2022
Shift of switching threshold in low-dimensional semiconductor-based complementary inverters via inkjet printingSeoyeon Jung, Jihyun Lee, Juhee Park, et al.
Nanotechnology|January 12, 2018
Field effect transistors and phototransistors based upon p-type solution-processed PbS nanowiresPaul Giraud, Bo Hou, Sangyeon Pak, et al.
ACS Applied Materials & Interfaces|March 11, 2022
Electromagnetic Interference Shielding with 2D Copper SulfideTaehun Kim, Sangyeon Pak, Jungmoon Lim, et al.
ACS Applied Materials & Interfaces|January 17, 2025
Mixed-Dimensional Semiconductors-Based Ternary Circuits with Tunable Negative Transconductance CharacteristicsHye Young Lee, Young-Ju Oh, Eunseo Joo, et al.
Nanoscale|September 24, 2013
Solution-processed Ag-doped ZnO nanowires grown on flexible polyester for nanogenerator applicationsSangHyo Lee, JunSeok Lee, WonBae Ko, et al.
Nanotechnology|May 3, 2014
Tunable threshold voltage of an n-type Si nanowire ferroelectric-gate field effect transistor for high-performance nonvolatile memory applicationsNgoc Huynh Van, Jae-Hyun Lee, Jung Inn Sohn, et al.
Advanced Materials (Deerfield Beach, Fla.)|August 12, 2011
P-type conduction characteristics of lithium-doped ZnO nanowiresJunseok Lee, Seungnam Cha, Jongmin Kim, et al.
ACS Applied Materials & Interfaces|January 22, 2025
Study of High Performance Nanoscale Channel Length Vertical Transistors with a Self-Aligned Blocking LayerGoeun Pyo, Su Jin Heo, Dongsu Kim, et al.
Nanoscale|September 2, 2025
Non-volatile resistive switching characteristics in Cu<sub>2-<i>x</i></sub>S-based memristorSeungsub Lee, Junsung Byeon, Sohyeon Park, et al.
Pageof 5