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Seungkwon Hwang

Showing results (1-10 of 7) with videos related to

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ACS Applied Materials & Interfaces|January 19, 2026
Enhancing Performance and Reliability of FeNAND Hybrid Memory via a 2D-WS<sub>2</sub> Layer for Charge Trapping and Ferroelectric CrystallizationHojung Jang, Seungkwon Hwang, Jongwon Yoon, et al.
Nanomaterials (Basel, Switzerland)|November 10, 2023
Integrated Logic Circuits Based on Wafer-Scale 2D-MoS<sub>2</sub> FETs Using Buried-Gate StructuresJu-Ah Lee, Jongwon Yoon, Seungkwon Hwang, et al.
Nanomaterials (Basel, Switzerland)|August 28, 2024
Gamma-Irradiation-Induced Electrical Characteristic Variations in MoS<sub>2</sub> Field-Effect Transistors with Buried Local Back-Gate StructureSu Jin Kim, Seungkwon Hwang, Jung-Dae Kwon, et al.
Small (Weinheim an Der Bergstrasse, Germany)|October 7, 2025
High-Performance and Scalable Ferroelectric Diodes Enabled via 2D-MoS<sub>2</sub> Buffer Layer Under Low Thermal BudgetSeungkwon Hwang, Kyumin Lee, Laeyong Jung, et al.
Small Methods|March 24, 2023
A Bioinspired Ultra Flexible Artificial van der Waals 2D-MoS<sub>2</sub> Channel/LiSiO<sub>x</sub> Solid Electrolyte Synapse Arrays via Laser-Lift Off Process for Wearable Adaptive Neuromorphic ComputingYunjeong Hwang, Byeongjin Park, Seungkwon Hwang, et al.
ACS Applied Materials & Interfaces|November 17, 2022
Robust 2D MoS<sub>2</sub> Artificial Synapse Device Based on a Lithium Silicate Solid Electrolyte for High-Precision Analogue Neuromorphic ComputingByeongjin Park, Yunjeong Hwang, Ojun Kwon, et al.
Nature Communications|May 19, 2025
Polarization-sensitive in-sensor computing in chiral organic integrated 2D p-n heterostructures for mixed-multimodal image processingJe-Jun Lee, Seong-Jun Han, Changsoon Choi, et al.
Pageof 1

Showing results (1-10 of 7) with videos related to

Sort By:
Pageof 1
ACS Applied Materials & Interfaces|January 19, 2026
Enhancing Performance and Reliability of FeNAND Hybrid Memory via a 2D-WS<sub>2</sub> Layer for Charge Trapping and Ferroelectric CrystallizationHojung Jang, Seungkwon Hwang, Jongwon Yoon, et al.
Nanomaterials (Basel, Switzerland)|November 10, 2023
Integrated Logic Circuits Based on Wafer-Scale 2D-MoS<sub>2</sub> FETs Using Buried-Gate StructuresJu-Ah Lee, Jongwon Yoon, Seungkwon Hwang, et al.
Nanomaterials (Basel, Switzerland)|August 28, 2024
Gamma-Irradiation-Induced Electrical Characteristic Variations in MoS<sub>2</sub> Field-Effect Transistors with Buried Local Back-Gate StructureSu Jin Kim, Seungkwon Hwang, Jung-Dae Kwon, et al.
Small (Weinheim an Der Bergstrasse, Germany)|October 7, 2025
High-Performance and Scalable Ferroelectric Diodes Enabled via 2D-MoS<sub>2</sub> Buffer Layer Under Low Thermal BudgetSeungkwon Hwang, Kyumin Lee, Laeyong Jung, et al.
Small Methods|March 24, 2023
A Bioinspired Ultra Flexible Artificial van der Waals 2D-MoS<sub>2</sub> Channel/LiSiO<sub>x</sub> Solid Electrolyte Synapse Arrays via Laser-Lift Off Process for Wearable Adaptive Neuromorphic ComputingYunjeong Hwang, Byeongjin Park, Seungkwon Hwang, et al.
ACS Applied Materials & Interfaces|November 17, 2022
Robust 2D MoS<sub>2</sub> Artificial Synapse Device Based on a Lithium Silicate Solid Electrolyte for High-Precision Analogue Neuromorphic ComputingByeongjin Park, Yunjeong Hwang, Ojun Kwon, et al.
Nature Communications|May 19, 2025
Polarization-sensitive in-sensor computing in chiral organic integrated 2D p-n heterostructures for mixed-multimodal image processingJe-Jun Lee, Seong-Jun Han, Changsoon Choi, et al.
Pageof 1