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The Journal of Physical Chemistry Letters|June 4, 2026
Gate-Tunable GeSe/MoSe2 Heterojunctions for In-Sensor Image ProcessingSixian Yang, Shuo Liu, Yongsi Liu, et al.
Nature Communications|July 22, 2025
Controllable growth of MoO3 dielectrics with sub-1 nm equivalent oxide thickness for 2D electronicsXueming Li, Shankun Xu, Zhengfan Zhang, et al.
Advanced Materials (Deerfield Beach, Fla.)|July 30, 2026
Quaternary PdPS0.55Se0.45 for SBUV-to-SWIR Broadband Photodetection and Tri-Band In-Sensor ProcessingShankun Xu, Sirui Liu, Kaiyao Xin, et al.
ACS Nano|June 10, 2026
Ferroelectric Gate-All-Around Transistors for 3D-Integrated Electronics and Neuromorphic VisionWenjie Chen, Dan Tang, Chengming Luo, et al.
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