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Shengjun Qin

Showing results (1-10 of 4) with videos related to

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Physical Chemistry Chemical Physics : PCCP|March 10, 2015
Atomistic study of dynamics for metallic filament growth in conductive-bridge random access memoryShengjun Qin, Zhan Liu, Guo Zhang, et al.
Nanoscale|September 20, 2012
A physics/circuit-based switching model for carbon-based resistive memory with sp2/sp3 cluster conversionShengjun Qin, Jinyu Zhang, Di Fu, et al.
ACS Applied Materials & Interfaces|September 1, 2023
Area-Selective Atomic Layer Deposition for Resistive Random-Access Memory DevicesIl-Kwon Oh, Asir Intisar Khan, Shengjun Qin, et al.
ACS Nano|June 25, 2024
Dimensional Scaling of Ferroelectric Properties of Hafnia-Zirconia Thin Films: Electrode Interface EffectsFei Huang, Balreen Saini, Lei Wan, et al.
Pageof 1

Showing results (1-10 of 4) with videos related to

Sort By:
Pageof 1
Physical Chemistry Chemical Physics : PCCP|March 10, 2015
Atomistic study of dynamics for metallic filament growth in conductive-bridge random access memoryShengjun Qin, Zhan Liu, Guo Zhang, et al.
Nanoscale|September 20, 2012
A physics/circuit-based switching model for carbon-based resistive memory with sp2/sp3 cluster conversionShengjun Qin, Jinyu Zhang, Di Fu, et al.
ACS Applied Materials & Interfaces|September 1, 2023
Area-Selective Atomic Layer Deposition for Resistive Random-Access Memory DevicesIl-Kwon Oh, Asir Intisar Khan, Shengjun Qin, et al.
ACS Nano|June 25, 2024
Dimensional Scaling of Ferroelectric Properties of Hafnia-Zirconia Thin Films: Electrode Interface EffectsFei Huang, Balreen Saini, Lei Wan, et al.
Pageof 1