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Nanoscale
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September 20, 2017
Electronic imitation of behavioral and psychological synaptic activities using TiO<sub>x</sub>/Al<sub>2</sub>O<sub>3</sub>-based memristor devices
Writam Banerjee, Qi Liu, Hangbing Lv, et al.
Small (Weinheim an Der Bergstrasse, Germany)
|
April 19, 2017
Resistive Switching Performance Improvement via Modulating Nanoscale Conductive Filament, Involving the Application of Two-Dimensional Layered Materials
Yu Li, Shibing Long, Qi Liu, et al.
Nanoscale Research Letters
|
September 21, 2018
An Overview of the Ultrawide Bandgap Ga<sub>2</sub>O<sub>3</sub> Semiconductor-Based Schottky Barrier Diode for Power Electronics Application
HuiWen Xue, QiMing He, GuangZhong Jian, et al.
Journal of Nanoscience and Nanotechnology
|
May 16, 2009
Resistance switching characteristics of zirconium oxide containing gold nanocrystals for nonvolatile memory applications
Weihua Guan, Shibing Long, Yuan Hu, et al.
Nanotechnology
|
May 26, 2010
Titanium-tungsten nanocrystals embedded in a SiO(2)/Al(2)O(3) gate dielectric stack for low-voltage operation in non-volatile memory
Shiqian Yang, Qin Wang, Manhong Zhang, et al.
ACS Omega
|
August 29, 2019
Variability Improvement of TiO <sub></sub> /Al<sub>2</sub>O<sub>3</sub> Bilayer Nonvolatile Resistive Switching Devices by Interfacial Band Engineering with an Ultrathin Al<sub>2</sub>O<sub>3</sub> Dielectric Material
Writam Banerjee, Xiaoxin Xu, Hangbing Lv, et al.
Optics Express
|
November 6, 2019
Advantages of AlGaN-based deep-ultraviolet light-emitting diodes with an Al-composition graded quantum barrier
Huabin Yu, Zhongjie Ren, Haochen Zhang, et al.
Nanoscale
|
November 28, 2017
Intrinsic anionic rearrangement by extrinsic control: transition of RS and CRS in thermally elevated TiN/HfO<sub>2</sub>/Pt RRAM
Writam Banerjee, Wu Fa Cai, Xiaolong Zhao, et al.
Optics Letters
|
May 1, 2023
Magnetically tunable diffractive optical elements based on ion-irradiated ultrathin ferromagnetic stacks
Xiaolin Huang, Siyuan Jiang, Biao Wu, et al.
Nanoscale
|
February 19, 2015
Retraction: High uniformity and improved nonlinearity by embedding nanocrystals in selector-less resistive random access memory
Writam Banerjee, Nianduan Lu, Ling Li, et al.
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Search research articles
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Showing results (1-10 of 62) with videos related to
Sort By:
Page
of 7
Nanoscale
|
September 20, 2017
Electronic imitation of behavioral and psychological synaptic activities using TiO<sub>x</sub>/Al<sub>2</sub>O<sub>3</sub>-based memristor devices
Writam Banerjee, Qi Liu, Hangbing Lv, et al.
Small (Weinheim an Der Bergstrasse, Germany)
|
April 19, 2017
Resistive Switching Performance Improvement via Modulating Nanoscale Conductive Filament, Involving the Application of Two-Dimensional Layered Materials
Yu Li, Shibing Long, Qi Liu, et al.
Nanoscale Research Letters
|
September 21, 2018
An Overview of the Ultrawide Bandgap Ga<sub>2</sub>O<sub>3</sub> Semiconductor-Based Schottky Barrier Diode for Power Electronics Application
HuiWen Xue, QiMing He, GuangZhong Jian, et al.
Journal of Nanoscience and Nanotechnology
|
May 16, 2009
Resistance switching characteristics of zirconium oxide containing gold nanocrystals for nonvolatile memory applications
Weihua Guan, Shibing Long, Yuan Hu, et al.
Nanotechnology
|
May 26, 2010
Titanium-tungsten nanocrystals embedded in a SiO(2)/Al(2)O(3) gate dielectric stack for low-voltage operation in non-volatile memory
Shiqian Yang, Qin Wang, Manhong Zhang, et al.
ACS Omega
|
August 29, 2019
Variability Improvement of TiO <sub></sub> /Al<sub>2</sub>O<sub>3</sub> Bilayer Nonvolatile Resistive Switching Devices by Interfacial Band Engineering with an Ultrathin Al<sub>2</sub>O<sub>3</sub> Dielectric Material
Writam Banerjee, Xiaoxin Xu, Hangbing Lv, et al.
Optics Express
|
November 6, 2019
Advantages of AlGaN-based deep-ultraviolet light-emitting diodes with an Al-composition graded quantum barrier
Huabin Yu, Zhongjie Ren, Haochen Zhang, et al.
Nanoscale
|
November 28, 2017
Intrinsic anionic rearrangement by extrinsic control: transition of RS and CRS in thermally elevated TiN/HfO<sub>2</sub>/Pt RRAM
Writam Banerjee, Wu Fa Cai, Xiaolong Zhao, et al.
Optics Letters
|
May 1, 2023
Magnetically tunable diffractive optical elements based on ion-irradiated ultrathin ferromagnetic stacks
Xiaolin Huang, Siyuan Jiang, Biao Wu, et al.
Nanoscale
|
February 19, 2015
Retraction: High uniformity and improved nonlinearity by embedding nanocrystals in selector-less resistive random access memory
Writam Banerjee, Nianduan Lu, Ling Li, et al.
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of 7