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Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
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An Overview of the Ultrawide Bandgap Ga2O3 Semiconductor-Based Schottky Barrier Diode for Power Electronics

HuiWen Xue1,2, QiMing He2, GuangZhong Jian2

  • 1College of Mechanical and Electrical Engineering, Sichuan Agricultural University, Yaan, 625014, China.

Nanoscale Research Letters
|September 21, 2018
PubMed

Keywords:
Baliga’s figure of meritBreakdown electric fieldGallium oxide (Ga2O3)On-resistancePower deviceSchottky barrier diode (SBD)Ultrawide bandgap semiconductor

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