Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Filters

Shibing Long

Showing results (1-10 of 60) with videos related to

Pageof 6
Sort By:
Nanoscale|September 20, 2017
Electronic imitation of behavioral and psychological synaptic activities using TiO<sub>x</sub>/Al<sub>2</sub>O<sub>3</sub>-based memristor devicesWritam Banerjee, Qi Liu, Hangbing Lv, et al.
Small (Weinheim an Der Bergstrasse, Germany)|April 19, 2017
Resistive Switching Performance Improvement via Modulating Nanoscale Conductive Filament, Involving the Application of Two-Dimensional Layered MaterialsYu Li, Shibing Long, Qi Liu, et al.
Nanoscale Research Letters|September 21, 2018
An Overview of the Ultrawide Bandgap Ga<sub>2</sub>O<sub>3</sub> Semiconductor-Based Schottky Barrier Diode for Power Electronics ApplicationHuiWen Xue, QiMing He, GuangZhong Jian, et al.
Journal of Nanoscience and Nanotechnology|May 16, 2009
Resistance switching characteristics of zirconium oxide containing gold nanocrystals for nonvolatile memory applicationsWeihua Guan, Shibing Long, Yuan Hu, et al.
Nanotechnology|May 26, 2010
Titanium-tungsten nanocrystals embedded in a SiO(2)/Al(2)O(3) gate dielectric stack for low-voltage operation in non-volatile memoryShiqian Yang, Qin Wang, Manhong Zhang, et al.
ACS Omega|August 29, 2019
Variability Improvement of TiO <sub></sub> /Al<sub>2</sub>O<sub>3</sub> Bilayer Nonvolatile Resistive Switching Devices by Interfacial Band Engineering with an Ultrathin Al<sub>2</sub>O<sub>3</sub> Dielectric MaterialWritam Banerjee, Xiaoxin Xu, Hangbing Lv, et al.
Optics Express|November 6, 2019
Advantages of AlGaN-based deep-ultraviolet light-emitting diodes with an Al-composition graded quantum barrierHuabin Yu, Zhongjie Ren, Haochen Zhang, et al.
Nanoscale|November 28, 2017
Intrinsic anionic rearrangement by extrinsic control: transition of RS and CRS in thermally elevated TiN/HfO<sub>2</sub>/Pt RRAMWritam Banerjee, Wu Fa Cai, Xiaolong Zhao, et al.
Optics Letters|May 1, 2023
Magnetically tunable diffractive optical elements based on ion-irradiated ultrathin ferromagnetic stacksXiaolin Huang, Siyuan Jiang, Biao Wu, et al.
ACS Nano|September 22, 2010
Controllable growth of nanoscale conductive filaments in solid-electrolyte-based ReRAM by using a metal nanocrystal covered bottom electrodeQi Liu, Shibing Long, Hangbing Lv, et al.
Pageof 6

Showing results (1-10 of 60) with videos related to

Sort By:
Pageof 6
Nanoscale|September 20, 2017
Electronic imitation of behavioral and psychological synaptic activities using TiO<sub>x</sub>/Al<sub>2</sub>O<sub>3</sub>-based memristor devicesWritam Banerjee, Qi Liu, Hangbing Lv, et al.
Small (Weinheim an Der Bergstrasse, Germany)|April 19, 2017
Resistive Switching Performance Improvement via Modulating Nanoscale Conductive Filament, Involving the Application of Two-Dimensional Layered MaterialsYu Li, Shibing Long, Qi Liu, et al.
Nanoscale Research Letters|September 21, 2018
An Overview of the Ultrawide Bandgap Ga<sub>2</sub>O<sub>3</sub> Semiconductor-Based Schottky Barrier Diode for Power Electronics ApplicationHuiWen Xue, QiMing He, GuangZhong Jian, et al.
Journal of Nanoscience and Nanotechnology|May 16, 2009
Resistance switching characteristics of zirconium oxide containing gold nanocrystals for nonvolatile memory applicationsWeihua Guan, Shibing Long, Yuan Hu, et al.
Nanotechnology|May 26, 2010
Titanium-tungsten nanocrystals embedded in a SiO(2)/Al(2)O(3) gate dielectric stack for low-voltage operation in non-volatile memoryShiqian Yang, Qin Wang, Manhong Zhang, et al.
ACS Omega|August 29, 2019
Variability Improvement of TiO <sub></sub> /Al<sub>2</sub>O<sub>3</sub> Bilayer Nonvolatile Resistive Switching Devices by Interfacial Band Engineering with an Ultrathin Al<sub>2</sub>O<sub>3</sub> Dielectric MaterialWritam Banerjee, Xiaoxin Xu, Hangbing Lv, et al.
Optics Express|November 6, 2019
Advantages of AlGaN-based deep-ultraviolet light-emitting diodes with an Al-composition graded quantum barrierHuabin Yu, Zhongjie Ren, Haochen Zhang, et al.
Nanoscale|November 28, 2017
Intrinsic anionic rearrangement by extrinsic control: transition of RS and CRS in thermally elevated TiN/HfO<sub>2</sub>/Pt RRAMWritam Banerjee, Wu Fa Cai, Xiaolong Zhao, et al.
Optics Letters|May 1, 2023
Magnetically tunable diffractive optical elements based on ion-irradiated ultrathin ferromagnetic stacksXiaolin Huang, Siyuan Jiang, Biao Wu, et al.
ACS Nano|September 22, 2010
Controllable growth of nanoscale conductive filaments in solid-electrolyte-based ReRAM by using a metal nanocrystal covered bottom electrodeQi Liu, Shibing Long, Hangbing Lv, et al.
Pageof 6