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Shibing Long

Showing results (11-20 of 62) with videos related to

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ACS Nano|September 22, 2010
Controllable growth of nanoscale conductive filaments in solid-electrolyte-based ReRAM by using a metal nanocrystal covered bottom electrodeQi Liu, Shibing Long, Hangbing Lv, et al.
Nanoscale Research Letters|July 9, 2016
Analysis on the Filament Structure Evolution in Reset Transition of Cu/HfO2/Pt RRAM DeviceMeiyun Zhang, Shibing Long, Yang Li, et al.
Nanoscale|December 11, 2014
High uniformity and improved nonlinearity by embedding nanocrystals in selector-less resistive random access memoryWritam Banerjee, Nianduan Lu, Ling Li, et al.
Scientific Reports|October 15, 2013
Voltage and power-controlled regimes in the progressive unipolar RESET transition of HfO₂-based RRAMShibing Long, Luca Perniola, Carlo Cagli, et al.
Nano Letters|September 28, 2024
Ultrathin Ga<sub>2</sub>O<sub>3</sub> Photodetector with Fast Response and Trajectory Tracking Capability Fabricated by Liquid Metal OxidationWeiheng Zhong, Yuqing Liu, Hong Huang, et al.
Nanoscale|April 25, 2013
Bipolar one diode-one resistor integration for high-density resistive memory applicationsYingtao Li, Hangbing Lv, Qi Liu, et al.
Nanotechnology|December 9, 2017
Negative differential resistance effect induced by metal ion implantation in SiO<sub>2</sub> film for multilevel RRAM applicationFacai Wu, Shuyao Si, Tuo Shi, et al.
Advanced Materials (Deerfield Beach, Fla.)|March 13, 2012
Real-time observation on dynamic growth/dissolution of conductive filaments in oxide-electrolyte-based ReRAMQi Liu, Jun Sun, Hangbing Lv, et al.
Nature Communications|August 21, 2014
Thermoelectric Seebeck effect in oxide-based resistive switching memoryMing Wang, Chong Bi, Ling Li, et al.
Journal of Colloid and Interface Science|May 10, 2022
Micron channel length ZnO thin film transistors using bilayer electrodesSizhe Li, Xue Chen, Li Liu, et al.
Pageof 7

Showing results (11-20 of 62) with videos related to

Sort By:
Pageof 7
ACS Nano|September 22, 2010
Controllable growth of nanoscale conductive filaments in solid-electrolyte-based ReRAM by using a metal nanocrystal covered bottom electrodeQi Liu, Shibing Long, Hangbing Lv, et al.
Nanoscale Research Letters|July 9, 2016
Analysis on the Filament Structure Evolution in Reset Transition of Cu/HfO2/Pt RRAM DeviceMeiyun Zhang, Shibing Long, Yang Li, et al.
Nanoscale|December 11, 2014
High uniformity and improved nonlinearity by embedding nanocrystals in selector-less resistive random access memoryWritam Banerjee, Nianduan Lu, Ling Li, et al.
Scientific Reports|October 15, 2013
Voltage and power-controlled regimes in the progressive unipolar RESET transition of HfO₂-based RRAMShibing Long, Luca Perniola, Carlo Cagli, et al.
Nano Letters|September 28, 2024
Ultrathin Ga<sub>2</sub>O<sub>3</sub> Photodetector with Fast Response and Trajectory Tracking Capability Fabricated by Liquid Metal OxidationWeiheng Zhong, Yuqing Liu, Hong Huang, et al.
Nanoscale|April 25, 2013
Bipolar one diode-one resistor integration for high-density resistive memory applicationsYingtao Li, Hangbing Lv, Qi Liu, et al.
Nanotechnology|December 9, 2017
Negative differential resistance effect induced by metal ion implantation in SiO<sub>2</sub> film for multilevel RRAM applicationFacai Wu, Shuyao Si, Tuo Shi, et al.
Advanced Materials (Deerfield Beach, Fla.)|March 13, 2012
Real-time observation on dynamic growth/dissolution of conductive filaments in oxide-electrolyte-based ReRAMQi Liu, Jun Sun, Hangbing Lv, et al.
Nature Communications|August 21, 2014
Thermoelectric Seebeck effect in oxide-based resistive switching memoryMing Wang, Chong Bi, Ling Li, et al.
Journal of Colloid and Interface Science|May 10, 2022
Micron channel length ZnO thin film transistors using bilayer electrodesSizhe Li, Xue Chen, Li Liu, et al.
Pageof 7