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High uniformity and improved nonlinearity by embedding nanocrystals in selector-less resistive random access memory
Writam Banerjee1, Nianduan Lu, Ling Li
1Laboratory of Nano-Fabrication and Novel Devices Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China. writam.banerjee@gmail.com writam.banerjee@ime.ac.cn.
Nanoscale
|December 11, 2014
Summary
Metallic iridium oxide nanocrystals improve nonlinear characteristics in selector-less resistive random access memory (RRAM), reducing sneak paths for 3D crossbar arrays.
Area of Science:
- Materials Science
- Electrical Engineering
- Nanotechnology
Background:
- Sneak paths are a major challenge for high-density 3D crossbar resistive random access memory (RRAM).
- Selector-less RRAM devices require nonlinear current-voltage (I-V) characteristics to mitigate sneak paths.
Purpose of the Study:
- To demonstrate selector-less crossbar RRAM devices using metallic iridium oxide nanocrystals (IrOx-NC).
- To investigate the nonlinear behavior and reliability of these devices for 3D integration.
Main Methods:
- Fabrication of IrOx/AlOx/IrOx-NC/AlOx/W structured RRAM devices.
- Characterization of resistive switching, multilevel storage, and high-temperature data retention.
- Analysis of nonlinear I-V characteristics using hopping and 1D metal theories.
Main Results:
- Achieved highly reliable hysteresis resistive switching (>10,000 cycles).
- Demonstrated stable multilevel storage and high-temperature data retention.
- Observed improved nonlinear behavior compared to pure AlOx RRAM.
Conclusions:
- Metallic IrOx-NCs effectively enable selector-less RRAM with enhanced nonlinearity.
- The hopping model and 1D metal theory explain the observed nonlinear behavior.
- Further structure engineering can optimize nonlinearity for improved crossbar array sensing margins.
