Showing results (1-10 of 20) with videos related to

Sort By:
Pageof 2
Nature Nanotechnology|July 6, 2010
Long spin-relaxation time in a single metal nanoparticlePham Nam Hai, Shinobu Ohya, Masaaki Tanaka
Nature Communications|May 23, 2017
Artificial control of the bias-voltage dependence of tunnelling-anisotropic magnetoresistance using quantization in a single-crystal ferromagnetIriya Muneta, Toshiki Kanaki, Shinobu Ohya, et al.
Nature Communications|June 29, 2016
Sudden restoration of the band ordering associated with the ferromagnetic phase transition in a semiconductorIriya Muneta, Shinobu Ohya, Hiroshi Terada, et al.
Advanced Science (Weinheim, Baden-Wurttemberg, Germany)|June 17, 2023
Electric Field Control of Spin-Orbit Torque Magnetization Switching in a Spin-Orbit Ferromagnet Single LayerMiao Jiang, Hirokatsu Asahara, Shinobu Ohya, et al.
Physical Review Letters|May 21, 2010
Valence-band structure of the ferromagnetic semiconductor GaMnAs studied by spin-dependent resonant tunneling spectroscopyShinobu Ohya, Iriya Muneta, Pham Nam Hai, et al.
Microscopy (Oxford, England)|December 29, 2023
Magnetic field observation in a magnetic tunnel junction by scanning transmission electron microscopyYuji Kohno, Takehito Seki, Shun Tsuruoka, et al.
Scientific Reports|July 19, 2017
Magnetic anisotropy control by applying an electric field to the side surface of ferromagnetic filmsHiroshi Terada, Shinobu Ohya, Le Duc Anh, et al.
Scientific Reports|May 10, 2018
Large current modulation and tunneling magnetoresistance change by a side-gate electric field in a GaMnAs-based vertical spin metal-oxide-semiconductor field-effect transistorToshiki Kanaki, Hiroki Yamasaki, Tomohiro Koyama, et al.
Nature|March 10, 2009
Electromotive force and huge magnetoresistance in magnetic tunnel junctionsNam Hai Pham, Shinobu Ohya, Masaaki Tanaka, et al.
ACS Applied Materials & Interfaces|April 25, 2024
Field-Free Spin-Orbit Torque Magnetization Switching in a Perpendicularly Magnetized Semiconductor (Ga,Mn)As Single LayerMiao Jiang, Xinyuan Yang, Shengyuan Qu, et al.
Pageof 2