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Nano Letters
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March 11, 2016
Self-Limiting Oxides on WSe2 as Controlled Surface Acceptors and Low-Resistance Hole Contacts
Mahito Yamamoto, Shu Nakaharai, Keiji Ueno, et al.
ACS Applied Materials & Interfaces
|
May 21, 2016
Carrier Polarity Control in α-MoTe2 Schottky Junctions Based on Weak Fermi-Level Pinning
Shu Nakaharai, Mahito Yamamoto, Keiji Ueno, et al.
Advanced Materials (Deerfield Beach, Fla.)
|
February 11, 2022
Electrically Reconfigurable Organic Logic Gates: A Promising Perspective on a Dual-Gate Antiambipolar Transistor
Ryoma Hayakawa, Kosuke Honma, Shu Nakaharai, et al.
ACS Nano
|
July 31, 2012
Quantitative Raman spectrum and reliable thickness identification for atomic layers on insulating substrates
Song-Lin Li, Hisao Miyazaki, Haisheng Song, et al.
Nano Letters
|
March 19, 2020
Single-Carrier Transport in Graphene/hBN Superlattices
Takuya Iwasaki, Shu Nakaharai, Yutaka Wakayama, et al.
Nanoscale
|
November 15, 2012
Enhanced current-rectification in bilayer graphene with an electrically tuned sloped bandgap
Alex Aparecido-Ferreira, Hisao Miyazaki, Song-Lin Li, et al.
Scientific Reports
|
August 4, 2015
Erratum: Parity effect of bipolar quantum Hall edge transport around graphene antidots
Sadashige Matsuo, Shu Nakaharai, Katsuyoshi Komatsu, et al.
Scientific Reports
|
July 1, 2015
Parity effect of bipolar quantum Hall edge transport around graphene antidots
Sadashige Matsuo, Shu Nakaharai, Katsuyoshi Komatsu, et al.
ACS Nano
|
May 20, 2015
Electrostatically Reversible Polarity of Ambipolar α-MoTe2 Transistors
Shu Nakaharai, Mahito Yamamoto, Keiji Ueno, et al.
ACS Applied Materials & Interfaces
|
August 31, 2021
Enhanced Selectivity in Volatile Organic Compound Gas Sensors Based on ReS<sub>2</sub>-FETs under Light-Assisted and Gate-Bias Tunable Operation
Amir Zulkefli, Bablu Mukherjee, Ryoji Sahara, et al.
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of 3
Search research articles
Search
Showing results (1-10 of 25) with videos related to
Sort By:
Page
of 3
Nano Letters
|
March 11, 2016
Self-Limiting Oxides on WSe2 as Controlled Surface Acceptors and Low-Resistance Hole Contacts
Mahito Yamamoto, Shu Nakaharai, Keiji Ueno, et al.
ACS Applied Materials & Interfaces
|
May 21, 2016
Carrier Polarity Control in α-MoTe2 Schottky Junctions Based on Weak Fermi-Level Pinning
Shu Nakaharai, Mahito Yamamoto, Keiji Ueno, et al.
Advanced Materials (Deerfield Beach, Fla.)
|
February 11, 2022
Electrically Reconfigurable Organic Logic Gates: A Promising Perspective on a Dual-Gate Antiambipolar Transistor
Ryoma Hayakawa, Kosuke Honma, Shu Nakaharai, et al.
ACS Nano
|
July 31, 2012
Quantitative Raman spectrum and reliable thickness identification for atomic layers on insulating substrates
Song-Lin Li, Hisao Miyazaki, Haisheng Song, et al.
Nano Letters
|
March 19, 2020
Single-Carrier Transport in Graphene/hBN Superlattices
Takuya Iwasaki, Shu Nakaharai, Yutaka Wakayama, et al.
Nanoscale
|
November 15, 2012
Enhanced current-rectification in bilayer graphene with an electrically tuned sloped bandgap
Alex Aparecido-Ferreira, Hisao Miyazaki, Song-Lin Li, et al.
Scientific Reports
|
August 4, 2015
Erratum: Parity effect of bipolar quantum Hall edge transport around graphene antidots
Sadashige Matsuo, Shu Nakaharai, Katsuyoshi Komatsu, et al.
Scientific Reports
|
July 1, 2015
Parity effect of bipolar quantum Hall edge transport around graphene antidots
Sadashige Matsuo, Shu Nakaharai, Katsuyoshi Komatsu, et al.
ACS Nano
|
May 20, 2015
Electrostatically Reversible Polarity of Ambipolar α-MoTe2 Transistors
Shu Nakaharai, Mahito Yamamoto, Keiji Ueno, et al.
ACS Applied Materials & Interfaces
|
August 31, 2021
Enhanced Selectivity in Volatile Organic Compound Gas Sensors Based on ReS<sub>2</sub>-FETs under Light-Assisted and Gate-Bias Tunable Operation
Amir Zulkefli, Bablu Mukherjee, Ryoji Sahara, et al.
Page
of 3