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Siddheswar Maikap

Showing results (21-30 of 29) with videos related to

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Nanoscale Research Letters|May 10, 2013
Resistive switching memory characteristics of Ge/GeOx nanowires and evidence of oxygen ion migrationAmit Prakash, Siddheswar Maikap, Sheikh Ziaur Rahaman, et al.
Nanoscale Research Letters|May 16, 2015
Conductive-bridging random access memory: challenges and opportunity for 3D architectureDebanjan Jana, Sourav Roy, Rajeswar Panja, et al.
Nanoscale Research Letters|June 28, 2012
Excellent resistive memory characteristics and switching mechanism using a Ti nanolayer at the Cu/TaOx interfaceSheikh Ziaur Rahaman, Siddheswar Maikap, Ta-Chang Tien, et al.
Nanoscale Research Letters|September 30, 2016
Detection of pH and Enzyme-Free H2O2 Sensing Mechanism by Using GdO x Membrane in Electrolyte-Insulator-Semiconductor StructurePankaj Kumar, Siddheswar Maikap, Jian-Tai Qiu, et al.
Nanoscale Research Letters|March 24, 2012
Formation polarity dependent improved resistive switching memory characteristics using nanoscale (1.3 nm) core-shell IrOx nano-dotsWritam Banerjee, Siddheswar Maikap, Chao-Sung Lai, et al.
Nanoscale Research Letters|November 8, 2012
Enhanced nanoscale resistive switching memory characteristics and switching mechanism using high-Ge-content Ge0.5Se0.5 solid electrolyteSheikh Ziaur Rahaman, Siddheswar Maikap, Atanu Das, et al.
Scientific Reports|September 13, 2017
Understanding of multi-level resistive switching mechanism in GeO<sub>x</sub> through redox reaction in H<sub>2</sub>O<sub>2</sub>/sarcosine prostate cancer biomarker detectionSubhranu Samanta, Sheikh Ziaur Rahaman, Anisha Roy, et al.
Scientific Reports|July 7, 2017
Negative voltage modulated multi-level resistive switching by using a Cr/BaTiO<sub>x</sub>/TiN structure and quantum conductance through evidence of H<sub>2</sub>O<sub>2</sub> sensing mechanismSomsubhra Chakrabarti, Sreekanth Ginnaram, Surajit Jana, et al.
ACS Nano|March 31, 2026
Sub-2 nm Equivalent-Oxide-Thickness Ferroelectric Transistors for Cryogenic Memory and ComputingApu Das, Asim Senapati, Gautham Kumar, et al.
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Showing results (21-30 of 29) with videos related to

Sort By:
Pageof 3
You have reached the last page of results.This site can display upto 29 results.
Nanoscale Research Letters|May 10, 2013
Resistive switching memory characteristics of Ge/GeOx nanowires and evidence of oxygen ion migrationAmit Prakash, Siddheswar Maikap, Sheikh Ziaur Rahaman, et al.
Nanoscale Research Letters|May 16, 2015
Conductive-bridging random access memory: challenges and opportunity for 3D architectureDebanjan Jana, Sourav Roy, Rajeswar Panja, et al.
Nanoscale Research Letters|June 28, 2012
Excellent resistive memory characteristics and switching mechanism using a Ti nanolayer at the Cu/TaOx interfaceSheikh Ziaur Rahaman, Siddheswar Maikap, Ta-Chang Tien, et al.
Nanoscale Research Letters|September 30, 2016
Detection of pH and Enzyme-Free H2O2 Sensing Mechanism by Using GdO x Membrane in Electrolyte-Insulator-Semiconductor StructurePankaj Kumar, Siddheswar Maikap, Jian-Tai Qiu, et al.
Nanoscale Research Letters|March 24, 2012
Formation polarity dependent improved resistive switching memory characteristics using nanoscale (1.3 nm) core-shell IrOx nano-dotsWritam Banerjee, Siddheswar Maikap, Chao-Sung Lai, et al.
Nanoscale Research Letters|November 8, 2012
Enhanced nanoscale resistive switching memory characteristics and switching mechanism using high-Ge-content Ge0.5Se0.5 solid electrolyteSheikh Ziaur Rahaman, Siddheswar Maikap, Atanu Das, et al.
Scientific Reports|September 13, 2017
Understanding of multi-level resistive switching mechanism in GeO<sub>x</sub> through redox reaction in H<sub>2</sub>O<sub>2</sub>/sarcosine prostate cancer biomarker detectionSubhranu Samanta, Sheikh Ziaur Rahaman, Anisha Roy, et al.
Scientific Reports|July 7, 2017
Negative voltage modulated multi-level resistive switching by using a Cr/BaTiO<sub>x</sub>/TiN structure and quantum conductance through evidence of H<sub>2</sub>O<sub>2</sub> sensing mechanismSomsubhra Chakrabarti, Sreekanth Ginnaram, Surajit Jana, et al.
ACS Nano|March 31, 2026
Sub-2 nm Equivalent-Oxide-Thickness Ferroelectric Transistors for Cryogenic Memory and ComputingApu Das, Asim Senapati, Gautham Kumar, et al.
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