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In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
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Formation polarity dependent improved resistive switching memory characteristics using nanoscale (1.3 nm) core-shell

Writam Banerjee1, Siddheswar Maikap, Chao-Sung Lai

  • 1Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Rd,, Kwei-Shan, Tao-Yuan 333, Taiwan. sidhu@mail.cgu.edu.tw.

Nanoscale Research Letters
|March 24, 2012
PubMed

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