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Physical Review Letters|August 7, 2007
Origin of the optical contrast in phase-change materialsWojciech Wełnic, Silvana Botti, Lucia Reining, et al.Chemical Reviews|May 2, 2025
Resistive Switching Random-Access Memory (RRAM): Applications and Requirements for Memory and ComputingDaniele Ielmini, Giacomo PedrettiNature Communications|April 1, 2024
Memristive tonotopic mapping with volatile resistive switching memory devicesAlessandro Milozzi, Saverio Ricci, Daniele IelminiFrontiers in Neuroscience|May 20, 2020
Bio-Inspired Techniques in a Fully Digital Approach for Lifelong LearningStefano Bianchi, Irene Muñoz-Martin, Daniele IelminiFaraday Discussions|October 27, 2018
Impact of oxide and electrode materials on the switching characteristics of oxide ReRAM devicesElia Ambrosi, Alessandro Bricalli, Mario Laudato, et al.Npj Unconventional Computing|January 12, 2026
Achieving high precision in analog in-memory computing systemsPiergiulio Mannocci, Giacomo Larelli, Marco Bonomi, et al.Advanced Materials (Deerfield Beach, Fla.)|August 7, 2018
Logic Computing with Stateful Neural Networks of Resistive SwitchesZhong Sun, Elia Ambrosi, Alessandro Bricalli, et al.Science Advances|February 18, 2020
One-step regression and classification with cross-point resistive memory arraysZhong Sun, Giacomo Pedretti, Alessandro Bricalli, et al.Frontiers in Neuroscience|February 3, 2015
A 2-transistor/1-resistor artificial synapse capable of communication and stochastic learning in neuromorphic systemsZhongqiang Wang, Stefano Ambrogio, Simone Balatti, et al.Pageof 5