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Optics Letters
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August 1, 2020
InGaN blue light emitting micro-diodes with current path defined by tunnel junction
Krzysztof Gibasiewicz, Agata Bojarska-Cieślińska, Grzegorz Muzioł, et al.
Nanoscale
|
March 5, 2020
Revealing inhomogeneous Si incorporation into GaN at the nanometer scale by electrochemical etching
Marta Sawicka, Natalia Fiuczek, Henryk Turski, et al.
Materials (Basel, Switzerland)
|
January 11, 2022
Dependence of InGaN Quantum Well Thickness on the Nature of Optical Transitions in LEDs
Mateusz Hajdel, Mikolaj Chlipała, Marcin Siekacz, et al.
Materials (Basel, Switzerland)
|
September 9, 2022
Role of Metallic Adlayer in Limiting Ge Incorporation into GaN
Henryk Turski, Pawel Wolny, Mikolaj Chlipala, et al.
Nature Communications
|
November 21, 2023
Bidirectional light-emitting diode as a visible light source driven by alternating current
Mikołaj Żak, Grzegorz Muziol, Marcin Siekacz, et al.
ACS Applied Materials & Interfaces
|
June 20, 2026
Air-Cladding Blue Laser Diodes
Marta Sawicka, Mateusz Hajdel, Oliwia Gołyga, et al.
Crystal Growth & Design
|
July 10, 2023
Nanostars in Highly Si-Doped GaN
Marta Sawicka, Henryk Turski, Kamil Sobczak, et al.
Optics Express
|
November 13, 2020
Distributed-feedback blue laser diode utilizing a tunnel junction grown by plasma-assisted molecular beam epitaxy
G Muziol, M Hajdel, H Turski, et al.
Optics Express
|
April 27, 2022
Electrically pumped blue laser diodes with nanoporous bottom cladding
Marta Sawicka, Grzegorz Muziol, Natalia Fiuczek, et al.
Optics Express
|
March 17, 2021
Quantum-confined Stark effect and mechanisms of its screening in InGaN/GaN light-emitting diodes with a tunnel junction
K Pieniak, M Chlipala, H Turski, et al.
Page
of 3
Search research articles
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Showing results (11-20 of 22) with videos related to
Sort By:
Page
of 3
Optics Letters
|
August 1, 2020
InGaN blue light emitting micro-diodes with current path defined by tunnel junction
Krzysztof Gibasiewicz, Agata Bojarska-Cieślińska, Grzegorz Muzioł, et al.
Nanoscale
|
March 5, 2020
Revealing inhomogeneous Si incorporation into GaN at the nanometer scale by electrochemical etching
Marta Sawicka, Natalia Fiuczek, Henryk Turski, et al.
Materials (Basel, Switzerland)
|
January 11, 2022
Dependence of InGaN Quantum Well Thickness on the Nature of Optical Transitions in LEDs
Mateusz Hajdel, Mikolaj Chlipała, Marcin Siekacz, et al.
Materials (Basel, Switzerland)
|
September 9, 2022
Role of Metallic Adlayer in Limiting Ge Incorporation into GaN
Henryk Turski, Pawel Wolny, Mikolaj Chlipala, et al.
Nature Communications
|
November 21, 2023
Bidirectional light-emitting diode as a visible light source driven by alternating current
Mikołaj Żak, Grzegorz Muziol, Marcin Siekacz, et al.
ACS Applied Materials & Interfaces
|
June 20, 2026
Air-Cladding Blue Laser Diodes
Marta Sawicka, Mateusz Hajdel, Oliwia Gołyga, et al.
Crystal Growth & Design
|
July 10, 2023
Nanostars in Highly Si-Doped GaN
Marta Sawicka, Henryk Turski, Kamil Sobczak, et al.
Optics Express
|
November 13, 2020
Distributed-feedback blue laser diode utilizing a tunnel junction grown by plasma-assisted molecular beam epitaxy
G Muziol, M Hajdel, H Turski, et al.
Optics Express
|
April 27, 2022
Electrically pumped blue laser diodes with nanoporous bottom cladding
Marta Sawicka, Grzegorz Muziol, Natalia Fiuczek, et al.
Optics Express
|
March 17, 2021
Quantum-confined Stark effect and mechanisms of its screening in InGaN/GaN light-emitting diodes with a tunnel junction
K Pieniak, M Chlipala, H Turski, et al.
Page
of 3