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Applied Optics|December 4, 2009
Phase error analysis of incoherent triangular holographySoo-Gil Kim, Jeongduk Ryeom
Nature Nanotechnology|March 2, 2011
A size-dependent nanoscale metal-insulator transition in random materialsAlbert B K Chen, Soo Gil Kim, Yudi Wang, et al.
Nanoscale|April 27, 2017
Roles of conducting filament and non-filament regions in the Ta<sub>2</sub>O<sub>5</sub> and HfO<sub>2</sub> resistive switching memory for switching reliabilityTae Hyung Park, Hae Jin Kim, Woo Young Park, et al.
Scientific Reports|June 6, 2018
Exploring oxygen-affinity-controlled TaN electrodes for thermally advanced TaO<sub>x</sub> bipolar resistive switchingTaeyoon Kim, Gwangho Baek, Seungmo Yang, et al.
Scientific Reports|November 4, 2015
Thickness effect of ultra-thin Ta2O5 resistance switching layer in 28 nm-diameter memory cellTae Hyung Park, Seul Ji Song, Hae Jin Kim, et al.
ACS Applied Materials & Interfaces|March 18, 2026
Threshold Switching Behavior and Underlying Mechanisms in Pure SiO<sub>2</sub>-Based SelectorsHye Rim Kim, Tae Jung Ha, Jeong Hwan Song, et al.
Nano Convergence|March 4, 2025
Electronic threshold switching of As-embedded SiO<sub>2</sub> selectors: charged oxygen vacancy modelHye Rim Kim, Tae Jun Seok, Tae Jung Ha, et al.
Nanotechnology|May 17, 2011
SiO2 doped Ge2Sb2Te5 thin films with high thermal efficiency for applications in phase change random access memorySeung Wook Ryu, Ho-Ki Lyeo, Jong Ho Lee, et al.
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