Related Experiment Video
Updated: May 24, 2025

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
Published on: June 3, 2015
Electronic threshold switching of As-embedded SiO2 selectors: charged oxygen vacancy model
Hye Rim Kim1, Tae Jun Seok1, Tae Jung Ha2
1Department of Materials Science and Chemical Engineering, Hanyang University, Ansan 15588, Republic of Korea.
Abstract:
Sneak current issues in crossbar arrays of non-volatile memories can be effectively alleviated using threshold switching (TS)-based selectors. However, 1-selector-1-resistor integration requires coherence between the constituent materials and operational parameters of the two components. Here, we propose a highly coherent selector via in-depth investigation of the operation process of a fab-friendly As-SiO2 selector unit. The structural and electrical characteristics of an As-embedded SiO2 selector are analyzed, and the TS-on and -off operational mechanism is presented. Further, the critical control elements governing the selector operation are identified, including the electron charging into the oxygen vacancies in the SiO2 matrix and energy band alignment between the As cluster and charged oxygen vacancies in SiO2. Consequently, practical control strategies for the TS behavior are proposed with a pulse scheme applicable to actual device operation. The proposed TS operational mechanism and analytical methodology can contribute to interpreting and integrating various memory/selector components, thereby advancing their operational and integrative research.
More Related Videos
Related Concept Videos
MOSFET: Enhancement Mode
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
Switching of BJT
Cut-off Mode ("Off" State): In this state, both the emitter-base and collector-base junctions are...
MOSFET: Depletion Mode
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...
MOSFET
In an n-MOSFET, the structure includes n-type source and drain...
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Biasing of FET
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...

