Electronic threshold switching of As-embedded SiO₂ selectors: charged oxygen vacancy model

Area of Science:

• Materials Science
• Electrical Engineering
• Semiconductor Device Physics

Background:

• Sneak current in crossbar arrays of non-volatile memories poses a significant challenge.
• Effective alleviation requires coherent integration of threshold switching (TS)-based selectors with memory components.
• Existing integration methods face limitations due to material and operational parameter mismatches.

Purpose of the Study:

• To propose and investigate a highly coherent TS-based selector using an As-embedded SiO2 unit.
• To analyze the structural and electrical characteristics of the As-SiO2 selector.
• To elucidate the TS-on and -off operational mechanism and identify critical control elements.

Main Methods:

• In-depth investigation of the As-SiO2 selector unit's operation process.
• Analysis of structural and electrical characteristics.
• Identification of critical control elements, including electron charging into oxygen vacancies and energy band alignment.

Main Results:

• Detailed characterization of the As-embedded SiO2 selector's structural and electrical properties.
• Presentation of the TS-on and -off operational mechanism.
• Identification of electron charging in oxygen vacancies and band alignment as key control factors.
• Proposal of practical control strategies for TS behavior using a pulse scheme.

Conclusions:

• The proposed As-SiO2 selector offers a highly coherent solution for non-volatile memory applications.
• Understanding electron charging and band alignment is crucial for controlling TS behavior.
• The analytical methodology and operational mechanism advance research in memory/selector integration.