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Nano Letters|May 8, 2009
Precise semiconductor nanowire placement through dielectrophoresisSourobh Raychaudhuri, Shadi A Dayeh, Deli Wang, et al.Nano Letters|April 29, 2009
Surface diffusion and substrate-nanowire adatom exchange in InAs nanowire growthShadi A Dayeh, Edward T Yu, Deli WangNano Letters|July 5, 2007
III-V nanowire growth mechanism: V/III ratio and temperature effectsShadi A Dayeh, Edward T Yu, Deli WangNano Letters|September 12, 2008
Field dependent transport properties in InAs nanowire field effect transistorsShadi A Dayeh, Darija Susac, Karen L Kavanagh, et al.Small (Weinheim an Der Bergstrasse, Germany)|January 3, 2007
High electron mobility InAs nanowire field-effect transistorsShadi A Dayeh, David P R Aplin, Xiaotian Zhou, et al.Frontiers in Neuroscience|October 24, 2022
A universal model of electrochemical safety limits in vivo for electrophysiological stimulationRitwik Vatsyayan, Shadi A DayehAdvanced Materials Technologies|September 6, 2021
An Analytical Model for Dual Gate Piezoelectrically Sensitive ZnO Thin Film TransistorsHongseok Oh, Shadi A DayehNano Letters|April 17, 2015
Size and Orientation Effects on the Kinetics and Structure of Nickelide Contacts to InGaAs Fin StructuresRenjie Chen, Shadi A DayehSmall (Weinheim an Der Bergstrasse, Germany)|June 10, 2017
Recordings and Analysis of Atomic Ledge and Dislocation Movements in InGaAs to Nickelide Nanowire Phase TransformationRenjie Chen, Shadi A DayehSensors (Basel, Switzerland)|July 16, 2020
Physics-Based Device Models and Progress Review for Active Piezoelectric Semiconductor DevicesHongseok Oh, Shadi A DayehPageof 49