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Stacey F Bent

Showing results (21-30 of 113) with videos related to

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The Journal of Chemical Physics|February 3, 2020
Understanding chemical and physical mechanisms in atomic layer depositionNathaniel E Richey, Camila de Paula, Stacey F Bent
Biomedical Microdevices|May 24, 2007
A model neural interface based on functional chemical stimulationNeville Z Mehenti, Harvey A Fishman, Stacey F Bent
The Journal of Chemical Physics|February 26, 2024
Erratum: "Understanding chemical and physical mechanisms in atomic layer deposition" [J. Chem. Phys. 152, 040902 (2020)]Nathaniel E Richey, Camila de Paula, Stacey F Bent
Langmuir : the ACS Journal of Surfaces and Colloids|December 24, 2013
Formation of stable nitrene surface species by the reaction of adsorbed phenyl isocyanate at the Ge(100)-2 × 1 surfaceKeith T Wong, Jukka T Tanskanen, Stacey F Bent
Nanoscale|July 7, 2015
Atomic layer deposition in nanostructured photovoltaics: tuning optical, electronic and surface propertiesAxel F Palmstrom, Pralay K Santra, Stacey F Bent
Accounts of Chemical Research|January 1, 2010
Periodic trends in organic functionalization of group IV semiconductor surfacesJessica S Kachian, Keith T Wong, Stacey F Bent
ACS Nano|August 6, 2015
Increased Quantum Dot Loading by pH Control Reduces Interfacial Recombination in Quantum-Dot-Sensitized Solar CellsKatherine E Roelofs, Steven M Herron, Stacey F Bent
The Journal of Physical Chemistry. B|July 21, 2006
Ethylenediamine on Ge(100)-2 x 1: the role of interdimer interactionsAnsoon Kim, Michael A Filler, Sehun Kim, et al.
Journal of the American Chemical Society|April 21, 2005
Layer-by-layer growth on Ge(100) via spontaneous urea coupling reactionsAnsoon Kim, Michael A Filler, Sehun Kim, et al.
ACS Applied Materials & Interfaces|December 10, 2016
Selective Deposition of Dielectrics: Limits and Advantages of Alkanethiol Blocking Agents on Metal-Dielectric PatternsFatemeh Sadat Minaye Hashemi, Bradlee R Birchansky, Stacey F Bent
Pageof 12

Showing results (21-30 of 113) with videos related to

Sort By:
Pageof 12
The Journal of Chemical Physics|February 3, 2020
Understanding chemical and physical mechanisms in atomic layer depositionNathaniel E Richey, Camila de Paula, Stacey F Bent
Biomedical Microdevices|May 24, 2007
A model neural interface based on functional chemical stimulationNeville Z Mehenti, Harvey A Fishman, Stacey F Bent
The Journal of Chemical Physics|February 26, 2024
Erratum: "Understanding chemical and physical mechanisms in atomic layer deposition" [J. Chem. Phys. 152, 040902 (2020)]Nathaniel E Richey, Camila de Paula, Stacey F Bent
Langmuir : the ACS Journal of Surfaces and Colloids|December 24, 2013
Formation of stable nitrene surface species by the reaction of adsorbed phenyl isocyanate at the Ge(100)-2 × 1 surfaceKeith T Wong, Jukka T Tanskanen, Stacey F Bent
Nanoscale|July 7, 2015
Atomic layer deposition in nanostructured photovoltaics: tuning optical, electronic and surface propertiesAxel F Palmstrom, Pralay K Santra, Stacey F Bent
Accounts of Chemical Research|January 1, 2010
Periodic trends in organic functionalization of group IV semiconductor surfacesJessica S Kachian, Keith T Wong, Stacey F Bent
ACS Nano|August 6, 2015
Increased Quantum Dot Loading by pH Control Reduces Interfacial Recombination in Quantum-Dot-Sensitized Solar CellsKatherine E Roelofs, Steven M Herron, Stacey F Bent
The Journal of Physical Chemistry. B|July 21, 2006
Ethylenediamine on Ge(100)-2 x 1: the role of interdimer interactionsAnsoon Kim, Michael A Filler, Sehun Kim, et al.
Journal of the American Chemical Society|April 21, 2005
Layer-by-layer growth on Ge(100) via spontaneous urea coupling reactionsAnsoon Kim, Michael A Filler, Sehun Kim, et al.
ACS Applied Materials & Interfaces|December 10, 2016
Selective Deposition of Dielectrics: Limits and Advantages of Alkanethiol Blocking Agents on Metal-Dielectric PatternsFatemeh Sadat Minaye Hashemi, Bradlee R Birchansky, Stacey F Bent
Pageof 12