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Stephan Sleziona

Showing results (1-10 of 9) with videos related to

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Nanoscale|June 19, 2023
Evaluating strain and doping of Janus MoSSe from phonon mode shifts supported by <i>ab initio</i> DFT calculationsJennifer Schmeink, Vladislav Musytschuk, Erik Pollmann, et al.
ACS Omega|June 28, 2021
Large-Area, Two-Dimensional MoS<sub>2</sub> Exfoliated on Gold: Direct Experimental Access to the Metal-Semiconductor InterfaceErik Pollmann, Stephan Sleziona, Tobias Foller, et al.
Physical Chemistry Chemical Physics : PCCP|February 27, 2026
Investigating the kinetics of spin-crossover transitions using Raman spectroscopyGérald Kämmerer, Lea Kämmerer, Stephan Sleziona, et al.
Nanotechnology|January 21, 2021
Towards field-effect controlled graphene-enhanced Raman spectroscopy of cobalt octaethylporphyrin moleculesStephan Sleziona, Simon Rauls, Tobias Heckhoff, et al.
Heliyon|February 25, 2025
Pressure-dependent current transport in vertical BP/MoS<sub>2</sub> heterostructuresOfelia Durante, Sebastiano De Stefano, Adolfo Mazzotti, et al.
Nanoscale Advances|December 7, 2023
Manipulation of the electrical and memory properties of MoS<sub>2</sub> field-effect transistors by highly charged ion irradiationStephan Sleziona, Aniello Pelella, Enver Faella, et al.
Chemistry (Weinheim an Der Bergstrasse, Germany)|December 23, 2021
Structural Insights into Hysteretic Spin-Crossover in a Set of Iron(II)-2,6-bis(1H-Pyrazol-1-yl)Pyridine) ComplexesNithin Suryadevara, Asato Mizuno, Lea Spieker, et al.
ACS Applied Materials & Interfaces|August 19, 2020
Electron Irradiation of Metal Contacts in Monolayer MoS<sub>2</sub> Field-Effect TransistorsAniello Pelella, Osamah Kharsah, Alessandro Grillo, et al.
Materials Horizons|March 12, 2024
Memory effect and coexistence of negative and positive photoconductivity in black phosphorus field effect transistor for neuromorphic vision sensorsArun Kumar, Kimberly Intonti, Loredana Viscardi, et al.
Pageof 1

Showing results (1-10 of 9) with videos related to

Sort By:
Pageof 1
Nanoscale|June 19, 2023
Evaluating strain and doping of Janus MoSSe from phonon mode shifts supported by <i>ab initio</i> DFT calculationsJennifer Schmeink, Vladislav Musytschuk, Erik Pollmann, et al.
ACS Omega|June 28, 2021
Large-Area, Two-Dimensional MoS<sub>2</sub> Exfoliated on Gold: Direct Experimental Access to the Metal-Semiconductor InterfaceErik Pollmann, Stephan Sleziona, Tobias Foller, et al.
Physical Chemistry Chemical Physics : PCCP|February 27, 2026
Investigating the kinetics of spin-crossover transitions using Raman spectroscopyGérald Kämmerer, Lea Kämmerer, Stephan Sleziona, et al.
Nanotechnology|January 21, 2021
Towards field-effect controlled graphene-enhanced Raman spectroscopy of cobalt octaethylporphyrin moleculesStephan Sleziona, Simon Rauls, Tobias Heckhoff, et al.
Heliyon|February 25, 2025
Pressure-dependent current transport in vertical BP/MoS<sub>2</sub> heterostructuresOfelia Durante, Sebastiano De Stefano, Adolfo Mazzotti, et al.
Nanoscale Advances|December 7, 2023
Manipulation of the electrical and memory properties of MoS<sub>2</sub> field-effect transistors by highly charged ion irradiationStephan Sleziona, Aniello Pelella, Enver Faella, et al.
Chemistry (Weinheim an Der Bergstrasse, Germany)|December 23, 2021
Structural Insights into Hysteretic Spin-Crossover in a Set of Iron(II)-2,6-bis(1H-Pyrazol-1-yl)Pyridine) ComplexesNithin Suryadevara, Asato Mizuno, Lea Spieker, et al.
ACS Applied Materials & Interfaces|August 19, 2020
Electron Irradiation of Metal Contacts in Monolayer MoS<sub>2</sub> Field-Effect TransistorsAniello Pelella, Osamah Kharsah, Alessandro Grillo, et al.
Materials Horizons|March 12, 2024
Memory effect and coexistence of negative and positive photoconductivity in black phosphorus field effect transistor for neuromorphic vision sensorsArun Kumar, Kimberly Intonti, Loredana Viscardi, et al.
Pageof 1