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Pressure-dependent current transport in vertical BP/MoS2 heterostructures.
Ofelia Durante1, Sebastiano De Stefano1, Adolfo Mazzotti1
1Department of Physics "E. R. Caianiello", University of Salerno, via Giovanni Paolo II, Fisciano, Salerno, 84084, Italy.
Heliyon
|February 25, 2025
Summary
Black phosphorus/molybdenum disulfide heterostructures show tunable rectifying and transistor properties, performing best under low air pressure for advanced electronic applications.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Van der Waals heterostructures from two-dimensional (2D) materials enable novel electronic devices.
- Black phosphorus (BP) and molybdenum disulfide (MoS2) possess unique electronic and gate-tunable properties, making them ideal for heterostructures.
Purpose of the Study:
- Investigate the electrical properties of vertical BP/MoS2 heterostructures.
- Analyze the impact of air pressure on device performance.
- Explore conduction mechanisms and transistor characteristics.
Main Methods:
- Fabrication of a vertical BP/MoS2 heterostructure on a SiO2/Si substrate.
- Electrical characterization using a back-gate configuration across a pressure range (1 atm to 10^-4 mbar).
- Analysis of current-voltage (I-V) characteristics and transistor performance.
Main Results:
- Optimal electrical performance achieved at lower air pressures (10^-4 mbar).
- Gate-tunable rectifying behavior with a rectification ratio near 10^3.
- Identified kink in forward bias indicating drift-diffusion and band-to-band tunneling mechanisms.
- Demonstrated n-type transistor behavior with high gate modulation, low off-state current, and mobility of 1.6 cm^2 V^-1 s^-1.
Conclusions:
- BP/MoS2 heterostructures exhibit promising characteristics for electronic devices.
- Low air pressure enhances electrical performance.
- The devices show potential for low-power electronics, high-performance transistors, and pressure sensors.
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