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Steven P DenBaars

Showing results (21-30 of 65) with videos related to

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Optics Express|November 6, 2019
Demonstration of GaN-based vertical-cavity surface-emitting lasers with buried tunnel junction contactsSeungGeun Lee, Charles A Forman, Jared Kearns, et al.
Optics Express|November 13, 2020
Fabrication and chemical lift-off of sub-micron scale III-nitride LED structuresLesley Chan, Therese Karmstrand, Aaron Chan, et al.
Nano Letters|September 20, 2014
Surface structured optical coatings with near-perfect broadband and wide-angle antireflective propertiesEmmett E Perl, William E McMahon, Robert M Farrell, et al.
Optics Express|May 4, 2016
Demonstration of a III-nitride edge-emitting laser diode utilizing a GaN tunnel junction contactBenjamin P Yonkee, Erin C Young, Changmin Lee, et al.
Optics Letters|October 15, 2020
High performance of a semipolar InGaN laser with a phase-shifted embedded hydrogen silsesquioxane (HSQ) gratingHaojun Zhang, Daniel A Cohen, Philip Chan, et al.
Optics Express|May 27, 2018
Zinc oxide clad limited area epitaxy semipolar III-nitride laser diodesAnisa Myzaferi, Asad J Mughal, Daniel A Cohen, et al.
Optics Express|December 19, 2025
Green (524 nm) InGaN/GaN laser diodes with nano-porous cladding and deep-ridge waveguidingEmily Trageser, Matthew Wong, Ryan Anderson, et al.
Optics Express|March 2, 2023
Hybrid tunnel junction enabled independent junction control of cascaded InGaN blue/green micro-light-emitting diodesPanpan Li, Hongjian Li, Yifan Yao, et al.
Optics Express|May 5, 2019
Efficient tunnel junction contacts for high-power semipolar III-nitride edge-emitting laser diodesKareem W Hamdy, Erin C Young, Abdullah I Alhassan, et al.
Optics Express|September 15, 2023
High external quantum efficiency (6.8%) UV-A LEDs on AlN templates with quantum barrier optimizationYifan Yao, Hongjian Li, Michael Wang, et al.
Pageof 7

Showing results (21-30 of 65) with videos related to

Sort By:
Pageof 7
Optics Express|November 6, 2019
Demonstration of GaN-based vertical-cavity surface-emitting lasers with buried tunnel junction contactsSeungGeun Lee, Charles A Forman, Jared Kearns, et al.
Optics Express|November 13, 2020
Fabrication and chemical lift-off of sub-micron scale III-nitride LED structuresLesley Chan, Therese Karmstrand, Aaron Chan, et al.
Nano Letters|September 20, 2014
Surface structured optical coatings with near-perfect broadband and wide-angle antireflective propertiesEmmett E Perl, William E McMahon, Robert M Farrell, et al.
Optics Express|May 4, 2016
Demonstration of a III-nitride edge-emitting laser diode utilizing a GaN tunnel junction contactBenjamin P Yonkee, Erin C Young, Changmin Lee, et al.
Optics Letters|October 15, 2020
High performance of a semipolar InGaN laser with a phase-shifted embedded hydrogen silsesquioxane (HSQ) gratingHaojun Zhang, Daniel A Cohen, Philip Chan, et al.
Optics Express|May 27, 2018
Zinc oxide clad limited area epitaxy semipolar III-nitride laser diodesAnisa Myzaferi, Asad J Mughal, Daniel A Cohen, et al.
Optics Express|December 19, 2025
Green (524 nm) InGaN/GaN laser diodes with nano-porous cladding and deep-ridge waveguidingEmily Trageser, Matthew Wong, Ryan Anderson, et al.
Optics Express|March 2, 2023
Hybrid tunnel junction enabled independent junction control of cascaded InGaN blue/green micro-light-emitting diodesPanpan Li, Hongjian Li, Yifan Yao, et al.
Optics Express|May 5, 2019
Efficient tunnel junction contacts for high-power semipolar III-nitride edge-emitting laser diodesKareem W Hamdy, Erin C Young, Abdullah I Alhassan, et al.
Optics Express|September 15, 2023
High external quantum efficiency (6.8%) UV-A LEDs on AlN templates with quantum barrier optimizationYifan Yao, Hongjian Li, Michael Wang, et al.
Pageof 7