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Steven R Schofield

Showing results (1-10 of 24) with videos related to

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Journal of Physics. Condensed Matter : an Institute of Physics Journal|March 19, 2015
Single dopants in semiconductorsSteven R Schofield, Sven Rogge
Journal of Physics. Condensed Matter : an Institute of Physics Journal|November 22, 2014
Organic molecules on inorganic surfacesSteven R Schofield, Veronika Brázdová
Journal of Physics. Condensed Matter : an Institute of Physics Journal|April 19, 2022
Atomic and molecular functionalisation of technological materials: an introduction to nanoscale processes on semiconductor surfacesSteven R Schofield, Andrew V Teplyakov, Talat S Rahman
Journal of Physics. Condensed Matter : an Institute of Physics Journal|November 22, 2014
Manipulating the orientation of an organic adsorbate on silicon: a NEXAFS study of acetophenone on Si(0 0 1)Kane M O'Donnell, Oliver Warschkow, Asif Suleman, et al.
The Journal of Chemical Physics|February 17, 2011
Dimer pinning and the assignment of semiconductor-adsorbate surface structuresPhillip V Smith, Oliver Warschkow, Marian W Radny, et al.
Journal of the American Chemical Society|August 24, 2012
Guided self-assembly of metal atoms on silicon using organic-molecule templatingDaniel R Belcher, Marian W Radny, Steven R Schofield, et al.
Journal of the American Chemical Society|August 28, 2007
Organic bonding to silicon via a carbonyl group: new insights from atomic-scale imagesSteven R Schofield, Sherin A Saraireh, Phillip V Smith, et al.
ACS Nano|November 29, 2012
Site-dependent ambipolar charge states induced by group V atoms in a silicon surfacePhilipp Studer, Veronika Brázdová, Steven R Schofield, et al.
Advanced Materials (Deerfield Beach, Fla.)|February 21, 2024
Single-Atom Control of Arsenic Incorporation in Silicon for High-Yield Artificial Lattice FabricationTaylor J Z Stock, Oliver Warschkow, Procopios C Constantinou, et al.
Angewandte Chemie (International Ed. in English)|December 9, 2022
Room Temperature Incorporation of Arsenic Atoms into the Germanium (001) SurfaceEmily V S Hofmann, Taylor J Z Stock, Oliver Warschkow, et al.
Pageof 3

Showing results (1-10 of 24) with videos related to

Sort By:
Pageof 3
Journal of Physics. Condensed Matter : an Institute of Physics Journal|March 19, 2015
Single dopants in semiconductorsSteven R Schofield, Sven Rogge
Journal of Physics. Condensed Matter : an Institute of Physics Journal|November 22, 2014
Organic molecules on inorganic surfacesSteven R Schofield, Veronika Brázdová
Journal of Physics. Condensed Matter : an Institute of Physics Journal|April 19, 2022
Atomic and molecular functionalisation of technological materials: an introduction to nanoscale processes on semiconductor surfacesSteven R Schofield, Andrew V Teplyakov, Talat S Rahman
Journal of Physics. Condensed Matter : an Institute of Physics Journal|November 22, 2014
Manipulating the orientation of an organic adsorbate on silicon: a NEXAFS study of acetophenone on Si(0 0 1)Kane M O'Donnell, Oliver Warschkow, Asif Suleman, et al.
The Journal of Chemical Physics|February 17, 2011
Dimer pinning and the assignment of semiconductor-adsorbate surface structuresPhillip V Smith, Oliver Warschkow, Marian W Radny, et al.
Journal of the American Chemical Society|August 24, 2012
Guided self-assembly of metal atoms on silicon using organic-molecule templatingDaniel R Belcher, Marian W Radny, Steven R Schofield, et al.
Journal of the American Chemical Society|August 28, 2007
Organic bonding to silicon via a carbonyl group: new insights from atomic-scale imagesSteven R Schofield, Sherin A Saraireh, Phillip V Smith, et al.
ACS Nano|November 29, 2012
Site-dependent ambipolar charge states induced by group V atoms in a silicon surfacePhilipp Studer, Veronika Brázdová, Steven R Schofield, et al.
Advanced Materials (Deerfield Beach, Fla.)|February 21, 2024
Single-Atom Control of Arsenic Incorporation in Silicon for High-Yield Artificial Lattice FabricationTaylor J Z Stock, Oliver Warschkow, Procopios C Constantinou, et al.
Angewandte Chemie (International Ed. in English)|December 9, 2022
Room Temperature Incorporation of Arsenic Atoms into the Germanium (001) SurfaceEmily V S Hofmann, Taylor J Z Stock, Oliver Warschkow, et al.
Pageof 3