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Stoyan Nihtianov

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Scientific Reports|October 18, 2017
A doping-less junction-formation mechanism between n-silicon and an atomically thin boron layerVahid Mohammadi, Stoyan Nihtianov, Changming Fang
Materials (Basel, Switzerland)|March 14, 2026
Construction of Atomically Thin Boron Films on Si Heterojunctions Using a First Principles ApproachPiet Xiaowen Fang, Stoyan Nihtianov, Changming Fang
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Showing results (1-10 of 2) with videos related to

Sort By:
Pageof 1
Scientific Reports|October 18, 2017
A doping-less junction-formation mechanism between n-silicon and an atomically thin boron layerVahid Mohammadi, Stoyan Nihtianov, Changming Fang
Materials (Basel, Switzerland)|March 14, 2026
Construction of Atomically Thin Boron Films on Si Heterojunctions Using a First Principles ApproachPiet Xiaowen Fang, Stoyan Nihtianov, Changming Fang
Pageof 1