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Su-Huai Wei

Showing results (1-10 of 139) with videos related to

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Physical Review Letters|August 29, 2014
Origin of novel diffusions of Cu and Ag in semiconductors: the case of CdTeJie Ma, Su-Huai Wei
Physical Review Letters|April 15, 2022
Origin of Efficiency Enhancement by Lattice Expansion in Hybrid-Perovskite Solar CellsXie Zhang, Su-Huai Wei
Physical Review Letters|December 10, 2013
Tunable Anderson localization in hydrogenated graphene based on the electric field effectJoongoo Kang, Su-Huai Wei
Physical Review Letters|October 4, 2003
Design of shallow donor levels in diamond by isovalent-donor couplingD Segev, Su-Huai Wei
Physical Review Letters|December 21, 2011
Comment on "Mechanisms of postsynthesis doping of boron nitride nanostructures with carbon from first-principles simulations"Bing Huang, Su-Huai Wei
Physical Review Letters|February 6, 2018
Comment on "Fundamental Resolution of Difficulties in the Theory of Charged Point Defects in Semiconductors"Hui-Xiong Deng, Su-Huai Wei
Nano Letters|June 10, 2008
Enhanced ferromagnetic stability in Cu doped passivated GaN nanowiresH J Xiang, Su-Huai Wei
Physical Review Letters|December 17, 2004
Hole-mediated stabilization of cubic GaNGustavo M Dalpian, Su-Huai Wei
Physical Review Letters|March 5, 2004
Surface energy and the common dangling bond rule for semiconductorsS B Zhang, Su-Huai Wei
The Journal of Physical Chemistry Letters|December 14, 2017
Band Structure Engineering of Cs<sub>2</sub>AgBiBr<sub>6</sub> Perovskite through Order-Disordered Transition: A First-Principle StudyJingxiu Yang, Peng Zhang, Su-Huai Wei
Pageof 14

Showing results (1-10 of 139) with videos related to

Sort By:
Pageof 14
Physical Review Letters|August 29, 2014
Origin of novel diffusions of Cu and Ag in semiconductors: the case of CdTeJie Ma, Su-Huai Wei
Physical Review Letters|April 15, 2022
Origin of Efficiency Enhancement by Lattice Expansion in Hybrid-Perovskite Solar CellsXie Zhang, Su-Huai Wei
Physical Review Letters|December 10, 2013
Tunable Anderson localization in hydrogenated graphene based on the electric field effectJoongoo Kang, Su-Huai Wei
Physical Review Letters|October 4, 2003
Design of shallow donor levels in diamond by isovalent-donor couplingD Segev, Su-Huai Wei
Physical Review Letters|December 21, 2011
Comment on "Mechanisms of postsynthesis doping of boron nitride nanostructures with carbon from first-principles simulations"Bing Huang, Su-Huai Wei
Physical Review Letters|February 6, 2018
Comment on "Fundamental Resolution of Difficulties in the Theory of Charged Point Defects in Semiconductors"Hui-Xiong Deng, Su-Huai Wei
Nano Letters|June 10, 2008
Enhanced ferromagnetic stability in Cu doped passivated GaN nanowiresH J Xiang, Su-Huai Wei
Physical Review Letters|December 17, 2004
Hole-mediated stabilization of cubic GaNGustavo M Dalpian, Su-Huai Wei
Physical Review Letters|March 5, 2004
Surface energy and the common dangling bond rule for semiconductorsS B Zhang, Su-Huai Wei
The Journal of Physical Chemistry Letters|December 14, 2017
Band Structure Engineering of Cs<sub>2</sub>AgBiBr<sub>6</sub> Perovskite through Order-Disordered Transition: A First-Principle StudyJingxiu Yang, Peng Zhang, Su-Huai Wei
Pageof 14