Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Filters

Subhranu Samanta

Showing results (1-10 of 10) with videos related to

Pageof 1
Sort By:
Nanoscale Research Letters|December 18, 2013
Self-compliance-improved resistive switching using Ir/TaOx/W cross-point memoryAmit Prakash, Debanjan Jana, Subhranu Samanta, et al.
Nanoscale Research Letters|June 20, 2015
RRAM characteristics using a new Cr/GdOx/TiN structureDebanjan Jana, Mrinmoy Dutta, Subhranu Samanta, et al.
Nano-Micro Letters|November 23, 2018
Observation of Resistive Switching Memory by Reducing Device Size in a New Cr/CrO <sub></sub> /TiO <sub></sub> /TiN StructureDebanjan Jana, Subhranu Samanta, Sourav Roy, et al.
Langmuir : the ACS Journal of Surfaces and Colloids|February 23, 2019
Controlling Resistive Switching by Using an Optimized MoS<sub>2</sub> Interfacial Layer and the Role of Top Electrodes on Ascorbic Acid Sensing in TaO <sub>x</sub>-Based RRAMJiantai Timothy Qiu, Subhranu Samanta, Mrinmoy Dutta, et al.
Nanoscale Research Letters|September 9, 2016
Temperature-Dependent Non-linear Resistive Switching Characteristics and Mechanism Using a New W/WO3/WOx/W StructureSomsubhra Chakrabarti, Subhranu Samanta, Siddheswar Maikap, et al.
Physical Chemistry Chemical Physics : PCCP|September 22, 2017
Scalable cross-point resistive switching memory and mechanism through an understanding of H<sub>2</sub>O<sub>2</sub>/glucose sensing using an IrO<sub>x</sub>/Al<sub>2</sub>O<sub>3</sub>/W structureSomsubhra Chakrabarti, Siddheswar Maikap, Subhranu Samanta, et al.
Micromachines|June 5, 2019
Resistance Switching Statistics and Mechanisms of Pt Dispersed Silicon Oxide-Based MemristorsXiaojuan Lian, Xinyi Shen, Liqun Lu, et al.
Small (Weinheim an Der Bergstrasse, Germany)|August 16, 2024
Ferroelectric Aluminum Scandium Nitride Transistors with Intrinsic Switching Characteristics and Artificial Synaptic Functions for Neuromorphic ComputingJing Gao, Yu-Chieh Chien, Lingqi Li, et al.
ACS Sensors|March 13, 2025
High-Performance Piezoelectric Micro Diaphragm Hydrogen SensorJihang Liu, Doris Keh Ting Ng, Yul Koh, et al.
Scientific Reports|September 13, 2017
Understanding of multi-level resistive switching mechanism in GeO<sub>x</sub> through redox reaction in H<sub>2</sub>O<sub>2</sub>/sarcosine prostate cancer biomarker detectionSubhranu Samanta, Sheikh Ziaur Rahaman, Anisha Roy, et al.
Pageof 1

Showing results (1-10 of 10) with videos related to

Sort By:
Pageof 1
Nanoscale Research Letters|December 18, 2013
Self-compliance-improved resistive switching using Ir/TaOx/W cross-point memoryAmit Prakash, Debanjan Jana, Subhranu Samanta, et al.
Nanoscale Research Letters|June 20, 2015
RRAM characteristics using a new Cr/GdOx/TiN structureDebanjan Jana, Mrinmoy Dutta, Subhranu Samanta, et al.
Nano-Micro Letters|November 23, 2018
Observation of Resistive Switching Memory by Reducing Device Size in a New Cr/CrO <sub></sub> /TiO <sub></sub> /TiN StructureDebanjan Jana, Subhranu Samanta, Sourav Roy, et al.
Langmuir : the ACS Journal of Surfaces and Colloids|February 23, 2019
Controlling Resistive Switching by Using an Optimized MoS<sub>2</sub> Interfacial Layer and the Role of Top Electrodes on Ascorbic Acid Sensing in TaO <sub>x</sub>-Based RRAMJiantai Timothy Qiu, Subhranu Samanta, Mrinmoy Dutta, et al.
Nanoscale Research Letters|September 9, 2016
Temperature-Dependent Non-linear Resistive Switching Characteristics and Mechanism Using a New W/WO3/WOx/W StructureSomsubhra Chakrabarti, Subhranu Samanta, Siddheswar Maikap, et al.
Physical Chemistry Chemical Physics : PCCP|September 22, 2017
Scalable cross-point resistive switching memory and mechanism through an understanding of H<sub>2</sub>O<sub>2</sub>/glucose sensing using an IrO<sub>x</sub>/Al<sub>2</sub>O<sub>3</sub>/W structureSomsubhra Chakrabarti, Siddheswar Maikap, Subhranu Samanta, et al.
Micromachines|June 5, 2019
Resistance Switching Statistics and Mechanisms of Pt Dispersed Silicon Oxide-Based MemristorsXiaojuan Lian, Xinyi Shen, Liqun Lu, et al.
Small (Weinheim an Der Bergstrasse, Germany)|August 16, 2024
Ferroelectric Aluminum Scandium Nitride Transistors with Intrinsic Switching Characteristics and Artificial Synaptic Functions for Neuromorphic ComputingJing Gao, Yu-Chieh Chien, Lingqi Li, et al.
ACS Sensors|March 13, 2025
High-Performance Piezoelectric Micro Diaphragm Hydrogen SensorJihang Liu, Doris Keh Ting Ng, Yul Koh, et al.
Scientific Reports|September 13, 2017
Understanding of multi-level resistive switching mechanism in GeO<sub>x</sub> through redox reaction in H<sub>2</sub>O<sub>2</sub>/sarcosine prostate cancer biomarker detectionSubhranu Samanta, Sheikh Ziaur Rahaman, Anisha Roy, et al.
Pageof 1