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Structural Isomerism

Structural Isomerism

Isomerism in Complexes
Isomers are different chemical species that have the same chemical formula. Structural isomerism of coordination compounds can be divided into two subcategories, the linkage isomers and coordination-sphere isomers.
Linkage isomers occur when the coordination compound contains a ligand that can bind to the transition metal center through two different atoms. For example, the CN− ligand can bind through the carbon atom or through the nitrogen atom. Similarly, SCN− can...

Valence Bond Theory

Valence Bond Theory

Coordination compounds and complexes exhibit different colors, geometries, and magnetic behavior, depending on the metal atom/ion and ligands from which they are composed. In an attempt to explain the bonding and structure of coordination complexes, Linus Pauling proposed the valence bond theory, or VBT, using the concepts of hybridization and the overlapping of the atomic orbitals. According to VBT, the central metal atom or ion (Lewis acid) hybridizes to provide empty orbitals of suitable...

Crystal Field Theory - Octahedral Complexes

Crystal Field Theory - Octahedral Complexes

Crystal Field Theory
To explain the observed behavior of transition metal complexes (such as colors), a model involving electrostatic interactions between the electrons from the ligands and the electrons in the unhybridized d orbitals of the central metal atom has been developed. This electrostatic model is crystal field theory (CFT). It helps to understand, interpret, and predict the colors, magnetic behavior, and some structures of coordination compounds of transition metals.
CFT focuses on...

Periodic Classification of the Elements

Periodic Classification of the Elements

The periodic table arranges atoms based on increasing atomic number so that elements with the same chemical properties recur periodically. When their electron configurations are added to the table, a periodic recurrence of similar electron configurations in the outer shells of these elements is observed. Because they are in the outer shells of an atom, valence electrons play the most important role in chemical reactions. The outer electrons have the highest energy of the electrons in an atom...

Crystal Field Theory - Tetrahedral and Square Planar Complexes

Crystal Field Theory - Tetrahedral and Square Planar Complexes

Tetrahedral Complexes
Crystal field theory (CFT) is applicable to molecules in geometries other than octahedral. In octahedral complexes, the lobes of the dx2−y2 and dz2 orbitals point directly at the ligands. For tetrahedral complexes, the d orbitals remain in place, but with only four ligands located between the axes. None of the orbitals points directly at the tetrahedral ligands. However, the dx2−y2 and dz2 orbitals (along the Cartesian axes) overlap with the ligands less than the dxy,...

Coordination Number and Geometry

Coordination Number and Geometry

For transition metal complexes, the coordination number determines the geometry around the central metal ion. Table 1 compares coordination numbers to molecular geometry. The most common structures of the complexes in coordination compounds are octahedral, tetrahedral, and square planar.

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Quantitative Atomic-Site Analysis of Functional Dopants/Point Defects in Crystalline Materials by Electron-Channeling-Enhanced Microanalysis

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RRAM characteristics using a new Cr/GdOx/TiN structure.

Debanjan Jana¹, Mrinmoy Dutta, Subhranu Samanta

¹Thin Film Nano Technology Laboratory, Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Rd., Kwei-Shan, Tao-Yuan, 333, Taiwan, debanjan.jana@gmail.com.

Nanoscale Research Letters

|June 20, 2015

Summary

This summary is machine-generated.

This study introduces a new Cr/GdOx/TiN structure for resistive random access memory (RRAM). Larger 8-μm devices show superior performance due to optimized oxygen vacancy dynamics and interface area.

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Area of Science:

Materials Science
Solid-State Electronics
Nanotechnology

Background:

Resistive random access memory (RRAM) is a promising non-volatile memory technology.
Understanding the impact of device geometry and material properties on RRAM performance is crucial for future applications.

Purpose of the Study:

To investigate the resistive switching characteristics of a novel Cr/GdOx/TiN RRAM structure.
To analyze the influence of device size and GdOx film thickness on RRAM performance.
To elucidate the switching mechanism in the fabricated RRAM devices.

Main Methods:

Fabrication of Cr/GdOx/TiN RRAM devices with varying sizes (0.4×0.4 to 8×8 μm²).
Material characterization using Transmission Electron Microscopy (TEM), Energy Dispersive X-ray Spectroscopy (EDS), and X-ray Photoelectron Spectroscopy (XPS).
Electrical characterization of resistive switching behavior, including endurance and data retention tests.

Main Results:

Repeatable resistive switching observed at low operating voltage (±4 V) and current compliance (300 μA).
Oxygen vacancy filament formation/rupture through GdOx grain boundaries identified as the switching mechanism.
Larger 8-μm devices demonstrated superior characteristics compared to smaller 0.4-μm devices, attributed to higher oxygen recombination rates and larger interface areas.
Demonstrated good device-to-device uniformity (80% yield), long read endurance (>10⁵ cycles), and data retention (>3×10⁴ s).

Conclusions:

The Cr/GdOx/TiN structure shows potential for RRAM applications.
Device size significantly impacts RRAM performance, with larger devices offering advantages.
The study provides insights into the switching mechanism and material properties relevant for RRAM optimization.