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Sungjun Kim

Showing results (31-40 of 299) with videos related to

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Scientific Reports|August 17, 2021
Nonideal resistive and synaptic characteristics in Ag/ZnO/TiN device for neuromorphic systemJongmin Park, Hojeong Ryu, Sungjun Kim
Nanomaterials (Basel, Switzerland)|July 9, 2022
Resistive Switching and Synaptic Characteristics in ZnO/TaON-Based RRAM for Neuromorphic SystemInho Oh, Juyeong Pyo, Sungjun Kim
Materials (Basel, Switzerland)|December 23, 2022
Enhanced Short-Term Memory Plasticity of WOx-Based Memristors by Inserting AlO<sub>x</sub> Thin LayerJuyeong Pyo, Hoesung Ha, Sungjun Kim
The Journal of Chemical Physics|January 9, 2026
Ferroelectric domain relaxation enables reliable multi-bit storage in hafnia-based memristorsJio Shin, Chaewon Youn, Sungjun Kim
The Journal of Chemical Physics|December 16, 2024
Ferroelectric properties of HfAlOx-based ferroelectric memristor devices for neuromorphic applications: Influence of top electrode deposition methodWoohyun Park, Yongjin Park, Sungjun Kim
Physical Review Letters|October 10, 2006
Controlled flow of spin-entangled electrons via adiabatic quantum pumpingKunal K Das, Sungjun Kim, Ari Mizel
International Journal of Biological Macromolecules|July 11, 2024
Delivery of piperlongumine via hyaluronic acid/phenylboronic acid-mediated dual targetable polymersome for enhanced anticancer functionality against pancreatic tumorAshok Kumar Jangid, Sungjun Kim, Kyobum Kim
Scandinavian Journal of Caring Sciences|June 13, 2026
Factors Influencing Nurses' Person-Centred Care Practices in Dementia Care: A Scoping Review Based on the Donabedian ModelSungjun Kim, Jiyoung Kim, Kyoung Ja Kim
Materials (Basel, Switzerland)|March 29, 2023
Low-Frequency Noise-Based Mechanism Analysis of Endurance Degradation in Al/αTiO<sub>x</sub>/Al Resistive Random Access Memory DevicesJung-Kyu Lee, Juyeong Pyo, Sungjun Kim
Food Chemistry|August 23, 2022
Lipase-catalyzed production of pyridoxine monolaurate in solvent-free bioreactor systemHyunjong Yu, Sungjun Kim, Pahn-Shick Chang
Pageof 30

Showing results (31-40 of 299) with videos related to

Sort By:
Pageof 30
Scientific Reports|August 17, 2021
Nonideal resistive and synaptic characteristics in Ag/ZnO/TiN device for neuromorphic systemJongmin Park, Hojeong Ryu, Sungjun Kim
Nanomaterials (Basel, Switzerland)|July 9, 2022
Resistive Switching and Synaptic Characteristics in ZnO/TaON-Based RRAM for Neuromorphic SystemInho Oh, Juyeong Pyo, Sungjun Kim
Materials (Basel, Switzerland)|December 23, 2022
Enhanced Short-Term Memory Plasticity of WOx-Based Memristors by Inserting AlO<sub>x</sub> Thin LayerJuyeong Pyo, Hoesung Ha, Sungjun Kim
The Journal of Chemical Physics|January 9, 2026
Ferroelectric domain relaxation enables reliable multi-bit storage in hafnia-based memristorsJio Shin, Chaewon Youn, Sungjun Kim
The Journal of Chemical Physics|December 16, 2024
Ferroelectric properties of HfAlOx-based ferroelectric memristor devices for neuromorphic applications: Influence of top electrode deposition methodWoohyun Park, Yongjin Park, Sungjun Kim
Physical Review Letters|October 10, 2006
Controlled flow of spin-entangled electrons via adiabatic quantum pumpingKunal K Das, Sungjun Kim, Ari Mizel
International Journal of Biological Macromolecules|July 11, 2024
Delivery of piperlongumine via hyaluronic acid/phenylboronic acid-mediated dual targetable polymersome for enhanced anticancer functionality against pancreatic tumorAshok Kumar Jangid, Sungjun Kim, Kyobum Kim
Scandinavian Journal of Caring Sciences|June 13, 2026
Factors Influencing Nurses' Person-Centred Care Practices in Dementia Care: A Scoping Review Based on the Donabedian ModelSungjun Kim, Jiyoung Kim, Kyoung Ja Kim
Materials (Basel, Switzerland)|March 29, 2023
Low-Frequency Noise-Based Mechanism Analysis of Endurance Degradation in Al/αTiO<sub>x</sub>/Al Resistive Random Access Memory DevicesJung-Kyu Lee, Juyeong Pyo, Sungjun Kim
Food Chemistry|August 23, 2022
Lipase-catalyzed production of pyridoxine monolaurate in solvent-free bioreactor systemHyunjong Yu, Sungjun Kim, Pahn-Shick Chang
Pageof 30