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Updated: Sep 5, 2025

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
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Resistive Switching and Synaptic Characteristics in ZnO/TaON-Based RRAM for Neuromorphic System

Inho Oh1, Juyeong Pyo1, Sungjun Kim1

  • 1Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Korea.

Nanomaterials (Basel, Switzerland)
|July 9, 2022
PubMed

Keywords:
TaONZnObilayerlow and high currentmemristorresistive switching

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