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Optics Express
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February 23, 2010
AlxGa1-xAs nested waveguide heterostructures for continuously phase-matched terahertz difference frequency generation
C M Staus, T F Kuech, L McCaughan
Chemical Reviews
|
December 26, 2001
Surface Chemistry of Prototypical Bulk II-VI and III-V Semiconductors and Implications for Chemical Sensing
F Seker, K Meeker, T F Kuech, et al.
Optics Letters
|
December 1, 2007
Experimental demonstration of 1535-1555-nm simultaneous optical wavelength interchange with a nonlinear photonic crystal
A Chowdhury, C Staus, B F Boland, et al.
Nature
|
February 24, 2001
Light-emitting diodes as chemical sensors
A Ivanisevic, J Y Yeh, L Mawst, et al.
Optics Express
|
December 28, 2019
Electrically injected 1.64µm emitting In<sub>0.65</sub>Ga<sub>0.35</sub>As 3-QW laser diodes grown on mismatched substrates by MOVPE
H Kim, B Shi, Z Lingley, et al.
Nanotechnology
|
May 5, 2017
Annealing-induced precipitate formation behavior in MOVPE-grown GaAs<sub>1-x</sub> Bi <sub>x</sub> explored by atom probe tomography and HAADF-STEM
Adam W Wood, Weixin Chen, Honghyuk Kim, et al.
ACS Applied Materials & Interfaces
|
March 29, 2017
Degradation of Hole Transport Materials via Exciton-Driven Cyclization
Bruce M Bell, Michael B Clark, David D Devore, et al.
Page
of 1
Search research articles
Search
Showing results (1-10 of 7) with videos related to
Sort By:
Page
of 1
Optics Express
|
February 23, 2010
AlxGa1-xAs nested waveguide heterostructures for continuously phase-matched terahertz difference frequency generation
C M Staus, T F Kuech, L McCaughan
Chemical Reviews
|
December 26, 2001
Surface Chemistry of Prototypical Bulk II-VI and III-V Semiconductors and Implications for Chemical Sensing
F Seker, K Meeker, T F Kuech, et al.
Optics Letters
|
December 1, 2007
Experimental demonstration of 1535-1555-nm simultaneous optical wavelength interchange with a nonlinear photonic crystal
A Chowdhury, C Staus, B F Boland, et al.
Nature
|
February 24, 2001
Light-emitting diodes as chemical sensors
A Ivanisevic, J Y Yeh, L Mawst, et al.
Optics Express
|
December 28, 2019
Electrically injected 1.64µm emitting In<sub>0.65</sub>Ga<sub>0.35</sub>As 3-QW laser diodes grown on mismatched substrates by MOVPE
H Kim, B Shi, Z Lingley, et al.
Nanotechnology
|
May 5, 2017
Annealing-induced precipitate formation behavior in MOVPE-grown GaAs<sub>1-x</sub> Bi <sub>x</sub> explored by atom probe tomography and HAADF-STEM
Adam W Wood, Weixin Chen, Honghyuk Kim, et al.
ACS Applied Materials & Interfaces
|
March 29, 2017
Degradation of Hole Transport Materials via Exciton-Driven Cyclization
Bruce M Bell, Michael B Clark, David D Devore, et al.
Page
of 1