Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Filters

T Jungwirth

Showing results (31-40 of 58) with videos related to

Pageof 6
Sort By:
Nature Communications|June 10, 2016
Multiple-stable anisotropic magnetoresistance memory in antiferromagnetic MnTeD Kriegner, K Výborný, K Olejník, et al.
Physical Review Letters|October 6, 2000
Reorientation of anisotropy in a square well quantum hall sampleW Pan, T Jungwirth, H L Stormer, et al.
Nature Communications|September 11, 2014
Anisotropic magnetoresistance in an antiferromagnetic semiconductorI Fina, X Marti, D Yi, et al.
Nature Materials|May 6, 2008
Non-volatile ferroelectric control of ferromagnetism in (Ga,Mn)AsI Stolichnov, S W E Riester, H J Trodahl, et al.
Nature Communications|January 31, 2013
The essential role of carefully optimized synthesis for elucidating intrinsic material properties of (Ga,Mn)AsP Nĕmec, V Novák, N Tesařová, et al.
Nature Materials|June 11, 2013
Piezoelectric control of the mobility of a domain wall driven by adiabatic and non-adiabatic torquesE De Ranieri, P E Roy, D Fang, et al.
Nature Communications|May 20, 2017
Antiferromagnetic CuMnAs multi-level memory cell with microelectronic compatibilityK Olejník, V Schuler, X Marti, et al.
Nanotechnology|May 17, 2011
Ferroelectric polymer gates for non-volatile field effect control of ferromagnetism in (Ga, Mn)As layersI Stolichnov, S W E Riester, E Mikheev, et al.
Physical Review Letters|February 18, 2017
Imaging Current-Induced Switching of Antiferromagnetic Domains in CuMnAsM J Grzybowski, P Wadley, K W Edmonds, et al.
Scientific Reports|October 21, 2016
Isothermal anisotropic magnetoresistance in antiferromagnetic metallic IrMnR Galceran, I Fina, J Cisneros-Fernández, et al.
Pageof 6

Showing results (31-40 of 58) with videos related to

Sort By:
Pageof 6
Nature Communications|June 10, 2016
Multiple-stable anisotropic magnetoresistance memory in antiferromagnetic MnTeD Kriegner, K Výborný, K Olejník, et al.
Physical Review Letters|October 6, 2000
Reorientation of anisotropy in a square well quantum hall sampleW Pan, T Jungwirth, H L Stormer, et al.
Nature Communications|September 11, 2014
Anisotropic magnetoresistance in an antiferromagnetic semiconductorI Fina, X Marti, D Yi, et al.
Nature Materials|May 6, 2008
Non-volatile ferroelectric control of ferromagnetism in (Ga,Mn)AsI Stolichnov, S W E Riester, H J Trodahl, et al.
Nature Communications|January 31, 2013
The essential role of carefully optimized synthesis for elucidating intrinsic material properties of (Ga,Mn)AsP Nĕmec, V Novák, N Tesařová, et al.
Nature Materials|June 11, 2013
Piezoelectric control of the mobility of a domain wall driven by adiabatic and non-adiabatic torquesE De Ranieri, P E Roy, D Fang, et al.
Nature Communications|May 20, 2017
Antiferromagnetic CuMnAs multi-level memory cell with microelectronic compatibilityK Olejník, V Schuler, X Marti, et al.
Nanotechnology|May 17, 2011
Ferroelectric polymer gates for non-volatile field effect control of ferromagnetism in (Ga, Mn)As layersI Stolichnov, S W E Riester, E Mikheev, et al.
Physical Review Letters|February 18, 2017
Imaging Current-Induced Switching of Antiferromagnetic Domains in CuMnAsM J Grzybowski, P Wadley, K W Edmonds, et al.
Scientific Reports|October 21, 2016
Isothermal anisotropic magnetoresistance in antiferromagnetic metallic IrMnR Galceran, I Fina, J Cisneros-Fernández, et al.
Pageof 6