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Nature Communications|February 23, 2026
3D atomic-scale metrology of strain relaxation and roughness in Gate-All-Around transistors via electron ptychographyShake Karapetyan, Steven E Zeltmann, Glen Wilk, et al.
Scientific Reports|November 9, 2017
Atomically flat and uniform relaxed III-V epitaxial films on silicon substrate for heterogeneous and hybrid integrationMartin Holland, Mark van Dal, Blandine Duriez, et al.
Proceedings of the National Academy of Sciences of the United States of America|September 9, 2008
Superconductivity in the PbO-type structure alpha-FeSeFong-Chi Hsu, Jiu-Yong Luo, Kuo-Wei Yeh, et al.
Proceedings of the National Academy of Sciences of the United States of America|December 20, 2013
Fe-vacancy order and superconductivity in tetragonal β-Fe1-xSeTa-Kun Chen, Chung-Chieh Chang, Hsian-Hong Chang, et al.
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