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ACS Applied Materials & Interfaces|February 5, 2026
Low-Temperature Ru-Ru Hybrid Bonding: Ar/H2 Plasma and NH4OH Synergistic Activation for Ultrahigh Density InterconnectionYufei Bai, Jia Yang, Xinze Li, et al.ACS Applied Materials & Interfaces|March 14, 2025
Synergistic Plasma Activation-Enabled Low-Temperature Cobalt/SiO2 Hybrid Bonding without Oxide InterfacesXiaoyun Qi, Yufei Bai, Han Yan, et al.ACS Applied Materials & Interfaces|August 14, 2019
High Thermal Boundary Conductance across Bonded Heterogeneous GaN-SiC InterfacesFengwen Mu, Zhe Cheng, Jingjing Shi, et al.ACS Applied Materials & Interfaces|August 1, 2025
Low-Temperature In Situ Bonding with Ion-Free Neutral Species and Ammonia-Enhanced Activation for Microfluidic Chip ArchitectureXiaohui Yuan, Linjie Liu, Fanfan Niu, et al.Analytical and Bioanalytical Chemistry|December 3, 2011
Low-temperature direct bonding of glass nanofluidic chips using a two-step plasma surface activation processYan Xu, Chenxi Wang, Yiyang Dong, et al.Micromachines|May 1, 2020
Effect of Au Film Thickness and Surface Roughness on Room-Temperature Wafer Bonding and Wafer-Scale Vacuum Sealing by Au-Au Surface Activated BondingMichitaka Yamamoto, Takashi Matsumae, Yuichi Kurashima, et al.Lab on a Chip|February 5, 2013
Bonding of glass nanofluidic chips at room temperature by a one-step surface activation using an O2/CF4 plasma treatmentYan Xu, Chenxi Wang, Lixiao Li, et al.ACS Applied Materials & Interfaces|June 30, 2021
Thermal Visualization of Buried Interfaces Enabled by Ratio Signal and Steady-State Heating of Time-Domain ThermoreflectanceZhe Cheng, Fengwen Mu, Xiaoyang Ji, et al.ACS Omega|January 16, 2023
ReS2 on GaN Photodetector Using H+ Ion-Cut TechnologyXinke Liu, Jie Zhou, Jiangliu Luo, et al.Micromachines|September 25, 2019
Wafer Bonding of SiC-AlN at Room Temperature for All-SiC Capacitive Pressure SensorFengwen Mu, Yang Xu, Seongbin Shin, et al.Pageof 3