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Tae Sik Yoon

Showing results (31-40 of 47) with videos related to

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Journal of Nanoscience and Nanotechnology|January 5, 2016
Investigation of Switching Phenomenon in Metal-Tantalum Oxide InterfaceAbbas Yawar, Mi Ra Park, Quanli Hu, et al.
Nanotechnology|April 11, 2018
Synaptic characteristics with strong analog potentiation, depression, and short-term to long-term memory transition in a Pt/CeO<sub>2</sub>/Pt crossbar array structureHyung Jun Kim, Daehoon Park, Paul Yang, et al.
Nanotechnology|March 14, 2020
Effect of nitrogen-doping on drain current modulation characteristics of an indium-gallium-zinc oxide thin-film transistorKeonwon Beom, Minju Kim, Hyerin Lee, et al.
Sensors (Basel, Switzerland)|February 9, 2012
A nanopore structured high performance toluene gas sensor made by nanoimprinting methodKwang-Su Kim, Woon-Hyuk Baek, Jung-Min Kim, et al.
Neurorehabilitation|November 29, 2013
Effect of rhythmic auditory stimulation on gait and balance in hemiplegic stroke patientsJee Hyun Suh, Soo Jeong Han, Seo Young Jeon, et al.
ACS Applied Materials & Interfaces|March 6, 2025
Artificial Synaptic Properties in Oxygen-Based Electrochemical Random-Access Memory with CeO<sub>2</sub> Nanoparticle Assembly as Gate Insulator for Neuromorphic ComputingBoyoung Jeong, Taeyun Noh, Jimin Han, et al.
Nanotechnology|December 19, 2017
A study on the resistance switching of Ag<sub>2</sub>Se and Ta<sub>2</sub>O<sub>5</sub> heterojunctions using structural engineeringTae Sung Lee, Nam Joo Lee, Haider Abbas, et al.
Nanotechnology|June 24, 2017
Artificial synaptic characteristics with strong analog memristive switching in a Pt/CeO<sub>2</sub>/Pt structureHyung Jun Kim, Hong Zheng, Jong-Sung Park, et al.
Journal of Nanoscience and Nanotechnology|January 5, 2016
Enhancement of Emission Lifetime of CNT Emitters by Coating ZnO on the CNT SurfaceSang Hyun Yoon, Dae Joon Chung, Jong Lee, et al.
ACS Applied Materials & Interfaces|August 19, 2020
Effect of the Bilayer Period of Atomic Layer Deposition on the Growth Behavior and Electrical Properties of the Amorphous In-Zn-O FilmSangbong Lee, Yun-Ho Kang, Min-Sik Kim, et al.
Pageof 5

Showing results (31-40 of 47) with videos related to

Sort By:
Pageof 5
Journal of Nanoscience and Nanotechnology|January 5, 2016
Investigation of Switching Phenomenon in Metal-Tantalum Oxide InterfaceAbbas Yawar, Mi Ra Park, Quanli Hu, et al.
Nanotechnology|April 11, 2018
Synaptic characteristics with strong analog potentiation, depression, and short-term to long-term memory transition in a Pt/CeO<sub>2</sub>/Pt crossbar array structureHyung Jun Kim, Daehoon Park, Paul Yang, et al.
Nanotechnology|March 14, 2020
Effect of nitrogen-doping on drain current modulation characteristics of an indium-gallium-zinc oxide thin-film transistorKeonwon Beom, Minju Kim, Hyerin Lee, et al.
Sensors (Basel, Switzerland)|February 9, 2012
A nanopore structured high performance toluene gas sensor made by nanoimprinting methodKwang-Su Kim, Woon-Hyuk Baek, Jung-Min Kim, et al.
Neurorehabilitation|November 29, 2013
Effect of rhythmic auditory stimulation on gait and balance in hemiplegic stroke patientsJee Hyun Suh, Soo Jeong Han, Seo Young Jeon, et al.
ACS Applied Materials & Interfaces|March 6, 2025
Artificial Synaptic Properties in Oxygen-Based Electrochemical Random-Access Memory with CeO<sub>2</sub> Nanoparticle Assembly as Gate Insulator for Neuromorphic ComputingBoyoung Jeong, Taeyun Noh, Jimin Han, et al.
Nanotechnology|December 19, 2017
A study on the resistance switching of Ag<sub>2</sub>Se and Ta<sub>2</sub>O<sub>5</sub> heterojunctions using structural engineeringTae Sung Lee, Nam Joo Lee, Haider Abbas, et al.
Nanotechnology|June 24, 2017
Artificial synaptic characteristics with strong analog memristive switching in a Pt/CeO<sub>2</sub>/Pt structureHyung Jun Kim, Hong Zheng, Jong-Sung Park, et al.
Journal of Nanoscience and Nanotechnology|January 5, 2016
Enhancement of Emission Lifetime of CNT Emitters by Coating ZnO on the CNT SurfaceSang Hyun Yoon, Dae Joon Chung, Jong Lee, et al.
ACS Applied Materials & Interfaces|August 19, 2020
Effect of the Bilayer Period of Atomic Layer Deposition on the Growth Behavior and Electrical Properties of the Amorphous In-Zn-O FilmSangbong Lee, Yun-Ho Kang, Min-Sik Kim, et al.
Pageof 5