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Scientific Reports|November 4, 2015
Thickness effect of ultra-thin Ta2O5 resistance switching layer in 28 nm-diameter memory cellTae Hyung Park, Seul Ji Song, Hae Jin Kim, et al.
The Science of the Total Environment|September 6, 2025
Biologically safe restoration of heavy metal-contaminated soils through plant-microbe synergyMin-Kyu Park, Hyeonha Jang, Yeong-Jun Park, et al.
ACS Applied Materials & Interfaces|June 28, 2016
Uniform Self-rectifying Resistive Switching Behavior via Preformed Conducting Paths in a Vertical-type Ta2O5/HfO2-x Structure with a Sub-μm(2) Cell AreaJung Ho Yoon, Sijung Yoo, Seul Ji Song, et al.
Advanced Materials (Deerfield Beach, Fla.)|January 11, 2018
Nociceptive MemristorYumin Kim, Young Jae Kwon, Dae Eun Kwon, et al.
Nanoscale|September 8, 2016
A study of the transition between the non-polar and bipolar resistance switching mechanisms in the TiN/TiO2/Al memoryXing Long Shao, Kyung Min Kim, Kyung Jean Yoon, et al.
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