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Nanoscale
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February 7, 2023
Highly effective transfer of micro-LED pixels to the intermediate and rigid substrate with weak and tunable adhesion by thiol modification
Kui Pan, Jie Sun, Chang Lin, et al.
Materials (Basel, Switzerland)
|
February 2, 2019
Monolithic Integrated Device of GaN Micro-LED with Graphene Transparent Electrode and Graphene Active-Matrix Driving Transistor
Yafei Fu, Jie Sun, Zaifa Du, et al.
Advanced Science (Weinheim, Baden-Wurttemberg, Germany)
|
October 7, 2016
Side-Gated In<sub>2</sub>O<sub>3</sub> Nanowire Ferroelectric FETs for High-Performance Nonvolatile Memory Applications
Meng Su, Zhenyu Yang, Lei Liao, et al.
ACS Applied Materials & Interfaces
|
July 31, 2018
All-Solution-Processed Perovskite Quantum Dots Light-Emitting Diodes Based on the Solvent Engineering Strategy
Kaiyu Yang, Fushan Li, Yang Liu, et al.
ACS Applied Materials & Interfaces
|
April 14, 2018
Ultrastable Quantum Dot Composite Films under Severe Environments
Zunxian Yang, Yuxiang Zhang, Jiahui Liu, et al.
ACS Applied Materials & Interfaces
|
September 28, 2021
Mixed-Halide Perovskite Film-Based Neuromorphic Phototransistors for Mimicking Experience-History-Dependent Sensory Adaptation
Jiahui Liu, Zihong Shen, Yuliang Ye, et al.
Small (Weinheim an Der Bergstrasse, Germany)
|
February 16, 2025
In Situ Ring Opening Polymerization of High-Performance Full-Color CsPbX<sub>3</sub>@PDMS (X = Cl, Br, I) Nanospheres Toward Wide-Color-Gamut Displays
Junhu Cai, Xinxin Ren, Xiang Zhang, et al.
Nature
|
April 1, 2026
Nanoscale transfer-printed full-colour ultrahigh-resolution quantum dot LEDs
Lihua Lin, Jie Wang, Hailong Hu, et al.
ACS Applied Materials & Interfaces
|
July 24, 2020
Unclonable Perovskite Fluorescent Dots with Fingerprint Pattern for Multilevel Anticounterfeiting
Yang Liu, Yuanhui Zheng, Yangbin Zhu, et al.
Optics Letters
|
August 29, 2024
Ultrasmall-sized light-emitting diodes fabricated by ion implantation based on GaN epitaxial wafers with fully activated or unactivated p-GaN
Kui Pan, Kaixin Zhang, Yang Li, et al.
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of 15
Search research articles
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Showing results (121-130 of 145) with videos related to
Sort By:
Page
of 15
Nanoscale
|
February 7, 2023
Highly effective transfer of micro-LED pixels to the intermediate and rigid substrate with weak and tunable adhesion by thiol modification
Kui Pan, Jie Sun, Chang Lin, et al.
Materials (Basel, Switzerland)
|
February 2, 2019
Monolithic Integrated Device of GaN Micro-LED with Graphene Transparent Electrode and Graphene Active-Matrix Driving Transistor
Yafei Fu, Jie Sun, Zaifa Du, et al.
Advanced Science (Weinheim, Baden-Wurttemberg, Germany)
|
October 7, 2016
Side-Gated In<sub>2</sub>O<sub>3</sub> Nanowire Ferroelectric FETs for High-Performance Nonvolatile Memory Applications
Meng Su, Zhenyu Yang, Lei Liao, et al.
ACS Applied Materials & Interfaces
|
July 31, 2018
All-Solution-Processed Perovskite Quantum Dots Light-Emitting Diodes Based on the Solvent Engineering Strategy
Kaiyu Yang, Fushan Li, Yang Liu, et al.
ACS Applied Materials & Interfaces
|
April 14, 2018
Ultrastable Quantum Dot Composite Films under Severe Environments
Zunxian Yang, Yuxiang Zhang, Jiahui Liu, et al.
ACS Applied Materials & Interfaces
|
September 28, 2021
Mixed-Halide Perovskite Film-Based Neuromorphic Phototransistors for Mimicking Experience-History-Dependent Sensory Adaptation
Jiahui Liu, Zihong Shen, Yuliang Ye, et al.
Small (Weinheim an Der Bergstrasse, Germany)
|
February 16, 2025
In Situ Ring Opening Polymerization of High-Performance Full-Color CsPbX<sub>3</sub>@PDMS (X = Cl, Br, I) Nanospheres Toward Wide-Color-Gamut Displays
Junhu Cai, Xinxin Ren, Xiang Zhang, et al.
Nature
|
April 1, 2026
Nanoscale transfer-printed full-colour ultrahigh-resolution quantum dot LEDs
Lihua Lin, Jie Wang, Hailong Hu, et al.
ACS Applied Materials & Interfaces
|
July 24, 2020
Unclonable Perovskite Fluorescent Dots with Fingerprint Pattern for Multilevel Anticounterfeiting
Yang Liu, Yuanhui Zheng, Yangbin Zhu, et al.
Optics Letters
|
August 29, 2024
Ultrasmall-sized light-emitting diodes fabricated by ion implantation based on GaN epitaxial wafers with fully activated or unactivated p-GaN
Kui Pan, Kaixin Zhang, Yang Li, et al.
Page
of 15