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Science Advances|August 20, 2016
Approaching the ideal elastic strain limit in silicon nanowiresHongti Zhang, Jerry Tersoff, Shang Xu, et al.Physical Review Letters|September 28, 2010
Electronic phase diagram of single-element silicon "strain" superlatticesZheng Liu, Jian Wu, Wenhui Duan, et al.Physical Review Letters|August 11, 2005
Kinetic evolution and equilibrium morphology of strained islandsA Rastelli, M Stoffel, J Tersoff, et al.Physical Review Letters|June 1, 2001
Phase coexistence during surface phase transitionsJ B Hannon, F J zu Heringdorf, J Tersoff, et al.Nature Communications|January 19, 2016
Visualizing band offsets and edge states in bilayer-monolayer transition metal dichalcogenides lateral heterojunctionChendong Zhang, Yuxuan Chen, Jing-Kai Huang, et al.Science (New York, N.Y.)|July 1, 2017
Carbon nanotube transistors scaled to a 40-nanometer footprintQing Cao, Jerry Tersoff, Damon B Farmer, et al.Physical Review Letters|September 13, 2002
Carbon nanotubes as schottky barrier transistorsS Heinze, J Tersoff, R Martel, et al.Small (Weinheim an Der Bergstrasse, Germany)|March 12, 2014
Hierarchical 3D SERS substrates fabricated by integrating photolithographic microstructures and self-assembly of silver nanoparticlesQi Zhang, Yih Hong Lee, In Yee Phang, et al.Journal of Human Kinetics|September 26, 2022
Submaximal Testing to Estimate Aerobic Capacity Using a Matrix C5x StepmillLauren von Schaumburg, Kelly R Laurson, David Q Thomas, et al.Nature|April 5, 2002
Nanomechanics: response of a strained semiconductor structureFeng Liu, Paul Rugheimer, E Mateeva, et al.Pageof 164,163