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ACS Applied Materials & Interfaces
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July 31, 2024
Ferroelectric Al<sub>0.85</sub>Sc<sub>0.15</sub>N and Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Domain Switching Dynamics
Roberto Guido, Xuetao Wang, Bohan Xu, et al.
ACS Applied Materials & Interfaces
|
September 12, 2024
Weight Update in Ferroelectric Memristors with Identical and Nonidentical Pulses
Suzanne Lancaster, Maximilien Remillieux, Moritz Engl, et al.
ACS Applied Materials & Interfaces
|
August 26, 2025
Peak Splitting and Bias Fields in Ferroelectric Hafnia Mediated by Interface Charge Effects
Moritz Engl, Wassim Hamouda, Ines Häusler, et al.
ACS Nano
|
February 23, 2026
Junctionless Silicon Nanowire Transistors without the Use of Impurity Doping
Soundarya Nagarajan, Dirk König, Ingmar Ratschinski, et al.
ACS Applied Materials & Interfaces
|
August 15, 2018
Genuinely Ferroelectric Sub-1-Volt-Switchable Nanodomains in Hf <sub>x</sub>Zr<sub>(1- x)</sub>O<sub>2</sub> Ultrathin Capacitors
Igor Stolichnov, Matteo Cavalieri, Enrico Colla, et al.
Nano Letters
|
July 21, 2012
Ferroelectricity in Simple Binary ZrO2 and HfO2
Johannes Müller, Tim S Böscke, Uwe Schröder, et al.
Nanomaterials (Basel, Switzerland)
|
July 13, 2024
p-Type Schottky Contacts for Graphene Adjustable-Barrier Phototransistors
Carsten Strobel, Carlos Alvarado Chavarin, Martin Knaut, et al.
Nanoscale
|
December 28, 2020
Stabilizing the ferroelectric phase in HfO<sub>2</sub>-based films sputtered from ceramic targets under ambient oxygen
Terence Mittmann, Michail Michailow, Patrick D Lomenzo, et al.
Nano Letters
|
June 19, 2015
Scaling and Graphical Transport-Map Analysis of Ambipolar Schottky-Barrier Thin-Film Transistors Based on a Parallel Array of Si Nanowires
Dae-Young Jeon, Sebastian Pregl, So Jeong Park, et al.
Nature Communications
|
November 17, 2022
Three-to-one analog signal modulation with a single back-bias-controlled reconfigurable transistor
Maik Simon, Halid Mulaosmanovic, Violetta Sessi, et al.
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Showing results (31-40 of 73) with videos related to
Sort By:
Page
of 8
ACS Applied Materials & Interfaces
|
July 31, 2024
Ferroelectric Al<sub>0.85</sub>Sc<sub>0.15</sub>N and Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Domain Switching Dynamics
Roberto Guido, Xuetao Wang, Bohan Xu, et al.
ACS Applied Materials & Interfaces
|
September 12, 2024
Weight Update in Ferroelectric Memristors with Identical and Nonidentical Pulses
Suzanne Lancaster, Maximilien Remillieux, Moritz Engl, et al.
ACS Applied Materials & Interfaces
|
August 26, 2025
Peak Splitting and Bias Fields in Ferroelectric Hafnia Mediated by Interface Charge Effects
Moritz Engl, Wassim Hamouda, Ines Häusler, et al.
ACS Nano
|
February 23, 2026
Junctionless Silicon Nanowire Transistors without the Use of Impurity Doping
Soundarya Nagarajan, Dirk König, Ingmar Ratschinski, et al.
ACS Applied Materials & Interfaces
|
August 15, 2018
Genuinely Ferroelectric Sub-1-Volt-Switchable Nanodomains in Hf <sub>x</sub>Zr<sub>(1- x)</sub>O<sub>2</sub> Ultrathin Capacitors
Igor Stolichnov, Matteo Cavalieri, Enrico Colla, et al.
Nano Letters
|
July 21, 2012
Ferroelectricity in Simple Binary ZrO2 and HfO2
Johannes Müller, Tim S Böscke, Uwe Schröder, et al.
Nanomaterials (Basel, Switzerland)
|
July 13, 2024
p-Type Schottky Contacts for Graphene Adjustable-Barrier Phototransistors
Carsten Strobel, Carlos Alvarado Chavarin, Martin Knaut, et al.
Nanoscale
|
December 28, 2020
Stabilizing the ferroelectric phase in HfO<sub>2</sub>-based films sputtered from ceramic targets under ambient oxygen
Terence Mittmann, Michail Michailow, Patrick D Lomenzo, et al.
Nano Letters
|
June 19, 2015
Scaling and Graphical Transport-Map Analysis of Ambipolar Schottky-Barrier Thin-Film Transistors Based on a Parallel Array of Si Nanowires
Dae-Young Jeon, Sebastian Pregl, So Jeong Park, et al.
Nature Communications
|
November 17, 2022
Three-to-one analog signal modulation with a single back-bias-controlled reconfigurable transistor
Maik Simon, Halid Mulaosmanovic, Violetta Sessi, et al.
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of 8