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Tibor Grasser

Showing results (11-20 of 33) with videos related to

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Proceedings. Mathematical, Physical, and Engineering Sciences|July 21, 2016
Role of hydrogen in volatile behaviour of defects in SiO<sub>2</sub>-based electronic devicesYannick Wimmer, Al-Moatasem El-Sayed, Wolfgang Gös, et al.
Physical Review Letters|April 4, 2015
Hydrogen-induced rupture of strained Si─O bonds in amorphous silicon dioxideAl-Moatasem El-Sayed, Matthew B Watkins, Tibor Grasser, et al.
ACS Applied Materials & Interfaces|July 6, 2022
Epitaxial Growth of Crystalline CaF<sub>2</sub> on SiliceneDaniele Nazzari, Jakob Genser, Viktoria Ritter, et al.
ACS Nano|October 6, 2016
Long-Term Stability and Reliability of Black Phosphorus Field-Effect TransistorsYury Yuryevich Illarionov, Michael Waltl, Gerhard Rzepa, et al.
ACS Nano|June 8, 2018
Characterization of Single Defects in Ultrascaled MoS<sub>2</sub> Field-Effect TransistorsBernhard Stampfer, Feng Zhang, Yury Yuryevich Illarionov, et al.
Advanced Materials (Deerfield Beach, Fla.)|March 23, 2022
Perspective of 2D Integrated Electronic Circuits: Scientific Pipe Dream or Disruptive Technology?Michael Waltl, Theresia Knobloch, Konstantinos Tselios, et al.
Advanced Materials (Deerfield Beach, Fla.)|February 22, 2021
Dielectric Properties of Ultrathin CaF<sub>2</sub> Ionic CrystalsChao Wen, Alexander G Banshchikov, Yury Y Illarionov, et al.
Advanced Materials (Deerfield Beach, Fla.)|July 16, 2020
Dielectric Properties of Ultrathin CaF<sub>2</sub> Ionic CrystalsChao Wen, Alexander G Banshchikov, Yury Y Illarionov, et al.
Nature Electronics|July 5, 2022
Improving stability in two-dimensional transistors with amorphous gate oxides by Fermi-level tuningTheresia Knobloch, Burkay Uzlu, Yury Yu Illarionov, et al.
ACS Nano|March 19, 2025
Stability and Reliability of van der Waals High-κ SrTiO<sub>3</sub> Field-Effect Transistors with Small HysteresisSeyed Mehdi Sattari-Esfahlan, Allen Jian Yang, Rittik Ghosh, et al.
Pageof 4

Showing results (11-20 of 33) with videos related to

Sort By:
Pageof 4
Proceedings. Mathematical, Physical, and Engineering Sciences|July 21, 2016
Role of hydrogen in volatile behaviour of defects in SiO<sub>2</sub>-based electronic devicesYannick Wimmer, Al-Moatasem El-Sayed, Wolfgang Gös, et al.
Physical Review Letters|April 4, 2015
Hydrogen-induced rupture of strained Si─O bonds in amorphous silicon dioxideAl-Moatasem El-Sayed, Matthew B Watkins, Tibor Grasser, et al.
ACS Applied Materials & Interfaces|July 6, 2022
Epitaxial Growth of Crystalline CaF<sub>2</sub> on SiliceneDaniele Nazzari, Jakob Genser, Viktoria Ritter, et al.
ACS Nano|October 6, 2016
Long-Term Stability and Reliability of Black Phosphorus Field-Effect TransistorsYury Yuryevich Illarionov, Michael Waltl, Gerhard Rzepa, et al.
ACS Nano|June 8, 2018
Characterization of Single Defects in Ultrascaled MoS<sub>2</sub> Field-Effect TransistorsBernhard Stampfer, Feng Zhang, Yury Yuryevich Illarionov, et al.
Advanced Materials (Deerfield Beach, Fla.)|March 23, 2022
Perspective of 2D Integrated Electronic Circuits: Scientific Pipe Dream or Disruptive Technology?Michael Waltl, Theresia Knobloch, Konstantinos Tselios, et al.
Advanced Materials (Deerfield Beach, Fla.)|February 22, 2021
Dielectric Properties of Ultrathin CaF<sub>2</sub> Ionic CrystalsChao Wen, Alexander G Banshchikov, Yury Y Illarionov, et al.
Advanced Materials (Deerfield Beach, Fla.)|July 16, 2020
Dielectric Properties of Ultrathin CaF<sub>2</sub> Ionic CrystalsChao Wen, Alexander G Banshchikov, Yury Y Illarionov, et al.
Nature Electronics|July 5, 2022
Improving stability in two-dimensional transistors with amorphous gate oxides by Fermi-level tuningTheresia Knobloch, Burkay Uzlu, Yury Yu Illarionov, et al.
ACS Nano|March 19, 2025
Stability and Reliability of van der Waals High-κ SrTiO<sub>3</sub> Field-Effect Transistors with Small HysteresisSeyed Mehdi Sattari-Esfahlan, Allen Jian Yang, Rittik Ghosh, et al.
Pageof 4