Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Filters

Timothée Labau

Showing results (1-10 of 2) with videos related to

Pageof 1
Sort By:
Scientific Reports|October 21, 2025
p-GaN source integrated GaN/AlGaN/GaN double heterojunction field-effect transistor (FET) for next-generation electronic applicationsMohit Kumar, Timothée Labau, Laurent Xu, et al.
Communications Engineering|July 3, 2026
A robust GaN p-FET with unconventional electron conductionMohit Kumar, Laurent Xu, Timothée Labau, et al.
Pageof 1

Showing results (1-10 of 2) with videos related to

Sort By:
Pageof 1
Scientific Reports|October 21, 2025
p-GaN source integrated GaN/AlGaN/GaN double heterojunction field-effect transistor (FET) for next-generation electronic applicationsMohit Kumar, Timothée Labau, Laurent Xu, et al.
Communications Engineering|July 3, 2026
A robust GaN p-FET with unconventional electron conductionMohit Kumar, Laurent Xu, Timothée Labau, et al.
Pageof 1