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Sensors (Basel, Switzerland)|September 17, 2013
Currents induced by injected charge in junction detectorsEugenijus Gaubas, Tomas Ceponis, Vidas Kalesinskas
Sensors (Basel, Switzerland)|June 11, 2015
Profiling of Current Transients in Capacitor Type Diamond SensorsEugenijus Gaubas, Tomas Ceponis, Dovile Meskauskaite, et al.
Materials (Basel, Switzerland)|May 13, 2023
Luminescence Characteristics of the MOCVD GaN Structures with Chemically Etched SurfacesTomas Ceponis, Jevgenij Pavlov, Arunas Kadys, et al.
Materials (Basel, Switzerland)|March 10, 2022
5.5 MeV Electron Irradiation-Induced Transformation of Minority Carrier Traps in p-Type Si and Si1-xGex AlloysJevgenij Pavlov, Tomas Ceponis, Kornelijus Pukas, et al.
Sensors (Basel, Switzerland)|March 10, 2015
Simulations of operation dynamics of different type GaN particle sensorsEugenijus Gaubas, Tomas Ceponis, Vidas Kalesinskas, et al.
Materials (Basel, Switzerland)|August 5, 2017
Study of Charge Carrier Transport in GaN SensorsEugenijus Gaubas, Tomas Ceponis, Edmundas Kuokstis, et al.
Materials (Basel, Switzerland)|December 16, 2020
Study of Radiation-Induced Defects in p-Type Si1-xGex Diodes before and after AnnealingTomas Ceponis, Stanislau Lastovskii, Leonid Makarenko, et al.
Sensors (Basel, Switzerland)|December 5, 2020
Transient Electrical and Optical Characteristics of Electron and Proton Irradiated SiGe DetectorsTomas Ceponis, Laimonas Deveikis, Stanislau Lastovskii, et al.
Sensors (Basel, Switzerland)|August 4, 2019
Evolution of Scintillation and Electrical Characteristics of AlGaN Double-Response Sensors During Proton IrradiationTomas Ceponis, Kazimieras Badokas, Laimonas Deveikis, et al.
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