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Physics in Medicine and Biology
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February 10, 2018
Performance evaluation of a direct-conversion flat-panel detector system in imaging and quality assurance for a high-dose-rate <sup>192</sup>Ir source
Yoshinori Miyahara, Yuki Hara, Hiroto Nakashima, et al.
ACS Applied Materials & Interfaces
|
February 7, 2024
Single-Gate MoS<sub>2</sub> Tunnel FET with a Thickness-Modulated Homojunction
Tomohiro Fukui, Tomonori Nishimura, Yasumitsu Miyata, et al.
Journal of Applied Clinical Medical Physics
|
February 14, 2015
Usefulness of direct-conversion flat-panel detector system as a quality assurance tool for high-dose-rate 192Ir source
Yoshinori Miyahara, Hajime Kitagaki, Tomonori Nishimura, et al.
ACS Applied Materials & Interfaces
|
May 24, 2023
p-Type Conversion of WS<sub>2</sub> and WSe<sub>2</sub> by Position-Selective Oxidation Doping and Its Application in Top Gate Transistors
Ryoichi Kato, Haruki Uchiyama, Tomonori Nishimura, et al.
Small Methods
|
October 21, 2025
Quantitative ToF-SIMS Assessment of In-Plane and Out-of-Plane Nb Doping Uniformity in CVT-Grown MoS<sub>2</sub> Crystals
Itsuki Tanaka, Mian Wei, Tomonori Nishimura, et al.
Advanced Materials (Deerfield Beach, Fla.)
|
May 6, 2023
Shift-Current Photovoltaics Based on a Non-Centrosymmetric Phase in In-Plane Ferroelectric SnS
Yih-Ren Chang, Ryo Nanae, Satsuki Kitamura, et al.
Nature Communications
|
May 17, 2020
Purely in-plane ferroelectricity in monolayer SnS at room temperature
Naoki Higashitarumizu, Hayami Kawamoto, Chien-Ju Lee, et al.
ACS Omega
|
September 29, 2025
Structural and Electric Characterization of Sputtered Pt/WSe<sub>2</sub> Contacts toward High-Performance 2D p‑FETs
Ryuichi Nakajima, Tomonori Nishimura, Kaito Kanahashi, et al.
Advanced Materials (Deerfield Beach, Fla.)
|
July 6, 2026
MOCVD-Grown MoS<sub>2</sub> Wafers as a Transfer-Free Platform for Top-Gate Devices via Dry Interface Engineering
Shuhong Li, Juiteng Chang, Keisuke Atsumi, et al.
ACS Nano
|
March 3, 2025
Dimensionality-Induced Transition from Degenerate to Nondegenerate States in Nb-Doped WSe<sub>2</sub>
Kaito Kanahashi, Itsuki Tanaka, Tomonori Nishimura, et al.
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Search research articles
Search
Showing results (11-20 of 21) with videos related to
Sort By:
Page
of 3
Physics in Medicine and Biology
|
February 10, 2018
Performance evaluation of a direct-conversion flat-panel detector system in imaging and quality assurance for a high-dose-rate <sup>192</sup>Ir source
Yoshinori Miyahara, Yuki Hara, Hiroto Nakashima, et al.
ACS Applied Materials & Interfaces
|
February 7, 2024
Single-Gate MoS<sub>2</sub> Tunnel FET with a Thickness-Modulated Homojunction
Tomohiro Fukui, Tomonori Nishimura, Yasumitsu Miyata, et al.
Journal of Applied Clinical Medical Physics
|
February 14, 2015
Usefulness of direct-conversion flat-panel detector system as a quality assurance tool for high-dose-rate 192Ir source
Yoshinori Miyahara, Hajime Kitagaki, Tomonori Nishimura, et al.
ACS Applied Materials & Interfaces
|
May 24, 2023
p-Type Conversion of WS<sub>2</sub> and WSe<sub>2</sub> by Position-Selective Oxidation Doping and Its Application in Top Gate Transistors
Ryoichi Kato, Haruki Uchiyama, Tomonori Nishimura, et al.
Small Methods
|
October 21, 2025
Quantitative ToF-SIMS Assessment of In-Plane and Out-of-Plane Nb Doping Uniformity in CVT-Grown MoS<sub>2</sub> Crystals
Itsuki Tanaka, Mian Wei, Tomonori Nishimura, et al.
Advanced Materials (Deerfield Beach, Fla.)
|
May 6, 2023
Shift-Current Photovoltaics Based on a Non-Centrosymmetric Phase in In-Plane Ferroelectric SnS
Yih-Ren Chang, Ryo Nanae, Satsuki Kitamura, et al.
Nature Communications
|
May 17, 2020
Purely in-plane ferroelectricity in monolayer SnS at room temperature
Naoki Higashitarumizu, Hayami Kawamoto, Chien-Ju Lee, et al.
ACS Omega
|
September 29, 2025
Structural and Electric Characterization of Sputtered Pt/WSe<sub>2</sub> Contacts toward High-Performance 2D p‑FETs
Ryuichi Nakajima, Tomonori Nishimura, Kaito Kanahashi, et al.
Advanced Materials (Deerfield Beach, Fla.)
|
July 6, 2026
MOCVD-Grown MoS<sub>2</sub> Wafers as a Transfer-Free Platform for Top-Gate Devices via Dry Interface Engineering
Shuhong Li, Juiteng Chang, Keisuke Atsumi, et al.
ACS Nano
|
March 3, 2025
Dimensionality-Induced Transition from Degenerate to Nondegenerate States in Nb-Doped WSe<sub>2</sub>
Kaito Kanahashi, Itsuki Tanaka, Tomonori Nishimura, et al.
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of 3