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Scientific Reports|November 20, 2024
Thermally stable Bi<sub>2</sub>Te<sub>3</sub>/WSe<sub>2</sub> Van Der Waals contacts for pMOSFETs applicationWen Hsin Chang, Shogo Hatayama, Yuta Saito, et al.
Nanoscale|August 29, 2019
Monolayer MoS<sub>2</sub> growth at the Au-SiO<sub>2</sub> interfaceHong En Lim, Toshifumi Irisawa, Naoya Okada, et al.
Scientific Reports|February 5, 2026
Wafer-scale formation of MoS<sub>2</sub> with controlled thickness and high uniformity via conversion of MoO<sub>x</sub> using H<sub>2</sub>S sulfurization and subsequent crystallizationNaoya Okada, Shinichi Tanabe, Hitoshi Miura, et al.
Nanoscale|May 21, 2021
Optical study of electron and acoustic phonon confinement in ultrathin-body germanium-on-insulator nanolayersVladimir Poborchii, Jesse Groenen, Pavel I Geshev, et al.
Materials Horizons|April 6, 2023
Discovery of a metastable van der Waals semiconductor <i>via</i> polymorphic crystallization of an amorphous filmYuta Saito, Shogo Hatayama, Wen Hsin Chang, et al.
Scientific Reports|November 29, 2019
Gas-Source CVD Growth of Atomic Layered WS<sub>2</sub> from WF<sub>6</sub> and H<sub>2</sub>S Precursors with High Grain Size UniformityMitsuhiro Okada, Naoya Okada, Wen-Hsin Chang, et al.
Nanoscale|April 30, 2021
Air-stable and efficient electron doping of monolayer MoS<sub>2</sub> by salt-crown ether treatmentHiroto Ogura, Masahiko Kaneda, Yusuke Nakanishi, et al.
ACS Omega|September 29, 2025
Structural and Electric Characterization of Sputtered Pt/WSe<sub>2</sub> Contacts toward High-Performance 2D p‑FETsRyuichi Nakajima, Tomonori Nishimura, Kaito Kanahashi, et al.
ACS Nano|February 27, 2023
Multilayer In-Plane Heterostructures Based on Transition Metal Dichalcogenides for Advanced ElectronicsHiroto Ogura, Seiya Kawasaki, Zheng Liu, et al.
ACS Nano|July 18, 2022
Large-Scale 1T'-Phase Tungsten Disulfide Atomic Layers Grown by Gas-Source Chemical Vapor DepositionMitsuhiro Okada, Jiang Pu, Yung-Chang Lin, et al.
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