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Physical Review Letters|September 16, 2000
Structure and energetics of the Si- SiO2 interfaceTu, Tersoff
Physical Review Letters|December 17, 2004
Origin of apparent critical thickness for island formation in heteroepitaxyYuhai Tu, J Tersoff
Physical Review Letters|August 23, 2002
Microscopic dynamics of silicon oxidationYuhai Tu, J Tersoff
Physical Review Letters|March 16, 2007
Coarsening, mixing, and motion: the complex evolution of epitaxial islandsYuhai Tu, J Tersoff
Physical Review Letters|September 16, 2000
Role of fermi-level pinning in nanotube schottky diodesLeonard, Tersoff
Physical Review Letters|October 3, 2001
Facet growth under stress: the limits of strained-layer stabilityJ Tersoff
Nano Letters|January 11, 2007
Low-frequency noise in nanoscale ballistic transistorsJ Tersoff
Nano Letters|September 22, 2015
Stable Self-Catalyzed Growth of III-V NanowiresJ Tersoff
Physical Review Letters|November 18, 2000
Negative differential resistance in nanotube devicesLeonard, Tersoff
Physical Review Letters|October 30, 2012
Anomalous smoothing preceding island formation during growth on patterned substratesR Bergamaschini, J Tersoff, Y Tu, et al.
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