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Vyacheslav G Storchak

Showing results (1-10 of 32) with videos related to

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Physical Chemistry Chemical Physics : PCCP|July 30, 2014
Spin polarons in EuO layers: a quantum computational studyAndrey M Tokmachev, Oleg E Parfenov, Vyacheslav G Storchak
Journal of Physics. Condensed Matter : an Institute of Physics Journal|April 7, 2012
Thermal destruction of spin-polaron bands in the narrow-gap correlated semiconductors FeGa3 and FeSb2Vyacheslav G Storchak, Jess H Brewer, Roger L Lichti, et al.
Journal of Physics. Condensed Matter : an Institute of Physics Journal|May 12, 2016
Anomalous Hall effect in the prospective spintronic material Eu1-x Gd x O integrated with SiOleg E Parfenov, Dmitry V Averyanov, Andrey M Tokmachev, et al.
Physical Review Letters|September 4, 2008
Spatially resolved inhomogeneous ferromagnetism in (Ga,Mn)as diluted magnetic semiconductors: a microscopic study by muon spin relaxationVyacheslav G Storchak, Dmitry G Eshchenko, Elvezio Morenzoni, et al.
Journal of Physics. Condensed Matter : an Institute of Physics Journal|February 15, 2013
Observation of magnetic polarons in the magnetoresistive pyrochlore Lu2V2O7Vyacheslav G Storchak, Jess H Brewer, Dmitry G Eshchenko, et al.
ACS Applied Materials & Interfaces|February 28, 2015
Direct epitaxial integration of the ferromagnetic semiconductor EuO with silicon for spintronic applicationsDmitry V Averyanov, Yuri G Sadofyev, Andrey M Tokmachev, et al.
Nanoscale|August 16, 2022
2D magnetic phases of Eu on Ge(110)Dmitry V Averyanov, Ivan S Sokolov, Alexander N Taldenkov, et al.
ACS Applied Materials & Interfaces|May 29, 2018
High-Temperature Magnetism in Graphene Induced by Proximity to EuODmitry V Averyanov, Ivan S Sokolov, Andrey M Tokmachev, et al.
ACS Applied Materials & Interfaces|August 26, 2021
High Carrier Mobility in a Layered Antiferromagnet Integrated with SiliconOleg E Parfenov, Dmitry V Averyanov, Ivan S Sokolov, et al.
ACS Applied Materials & Interfaces|September 25, 2018
Interface-Induced Anomalous Hall Conductivity in a Confined MetalOleg E Parfenov, Dmitry V Averyanov, Andrey M Tokmachev, et al.
Pageof 4

Showing results (1-10 of 32) with videos related to

Sort By:
Pageof 4
Physical Chemistry Chemical Physics : PCCP|July 30, 2014
Spin polarons in EuO layers: a quantum computational studyAndrey M Tokmachev, Oleg E Parfenov, Vyacheslav G Storchak
Journal of Physics. Condensed Matter : an Institute of Physics Journal|April 7, 2012
Thermal destruction of spin-polaron bands in the narrow-gap correlated semiconductors FeGa3 and FeSb2Vyacheslav G Storchak, Jess H Brewer, Roger L Lichti, et al.
Journal of Physics. Condensed Matter : an Institute of Physics Journal|May 12, 2016
Anomalous Hall effect in the prospective spintronic material Eu1-x Gd x O integrated with SiOleg E Parfenov, Dmitry V Averyanov, Andrey M Tokmachev, et al.
Physical Review Letters|September 4, 2008
Spatially resolved inhomogeneous ferromagnetism in (Ga,Mn)as diluted magnetic semiconductors: a microscopic study by muon spin relaxationVyacheslav G Storchak, Dmitry G Eshchenko, Elvezio Morenzoni, et al.
Journal of Physics. Condensed Matter : an Institute of Physics Journal|February 15, 2013
Observation of magnetic polarons in the magnetoresistive pyrochlore Lu2V2O7Vyacheslav G Storchak, Jess H Brewer, Dmitry G Eshchenko, et al.
ACS Applied Materials & Interfaces|February 28, 2015
Direct epitaxial integration of the ferromagnetic semiconductor EuO with silicon for spintronic applicationsDmitry V Averyanov, Yuri G Sadofyev, Andrey M Tokmachev, et al.
Nanoscale|August 16, 2022
2D magnetic phases of Eu on Ge(110)Dmitry V Averyanov, Ivan S Sokolov, Alexander N Taldenkov, et al.
ACS Applied Materials & Interfaces|May 29, 2018
High-Temperature Magnetism in Graphene Induced by Proximity to EuODmitry V Averyanov, Ivan S Sokolov, Andrey M Tokmachev, et al.
ACS Applied Materials & Interfaces|August 26, 2021
High Carrier Mobility in a Layered Antiferromagnet Integrated with SiliconOleg E Parfenov, Dmitry V Averyanov, Ivan S Sokolov, et al.
ACS Applied Materials & Interfaces|September 25, 2018
Interface-Induced Anomalous Hall Conductivity in a Confined MetalOleg E Parfenov, Dmitry V Averyanov, Andrey M Tokmachev, et al.
Pageof 4