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The Journal of Chemical Physics|March 17, 2019
Chemical vapor deposition of monolayer-thin WS2 crystals from the WF6 and H2S precursors at low deposition temperatureB Groven, D Claes, A Nalin Mehta, et al.Nanotechnology|February 11, 2017
Observation and understanding of anisotropic strain relaxation in selectively grown SiGe fin structuresA Schulze, R Loo, P Ryan, et al.The Journal of Chemical Physics|February 10, 2017
Nucleation and growth mechanisms of Al2O3 atomic layerdeposition on synthetic polycrystalline MoS2H Zhang, D Chiappe, J Meersschaut, et al.Nanotechnology|March 19, 2011
Observation of diameter dependent carrier distribution in nanowire-based transistorsA Schulze, T Hantschel, P Eyben, et al.Journal of Microscopy|September 30, 2017
Structural characterization of SnS crystals formed by chemical vapour depositionA Nalin Mehta, H Zhang, A Dabral, et al.Scientific Reports|August 5, 2015
Epitaxial diamond-hexagonal silicon nano-ribbon growth on (001) siliconY Qiu, H Bender, O Richard, et al.Physical Review Letters|November 21, 2015
Field Effect and Strongly Localized Carriers in the Metal-Insulator Transition Material VO(2)K Martens, J W Jeong, N Aetukuri, et al.Pageof 3