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Nanomaterials (Basel, Switzerland)|November 26, 2022
Study of Defects and Nano-patterned Substrate Regulation Mechanism in AlN EpilayersWenwang Wei, Yi Peng, Yanlian Yang, et al.
Optics Express|February 1, 2024
Dual-coupling effect enables a high-performance self-powered UV photodetectorXianqi Lin, Lingyu Wan, Zhengbang Chen, et al.
Micromachines|February 25, 2022
Resonant Raman Scattering in Boron-Implanted GaNYi Peng, Wenwang Wei, Muhammad Farooq Saleem, et al.
Nanomaterials (Basel, Switzerland)|April 3, 2021
Temperature Dependence of Stress and Optical Properties in AlN Films Grown by MOCVDWenwang Wei, Yi Peng, Jiabin Wang, et al.
Nanotechnology|May 19, 2021
Effect of backside dry etching on the device performance of AlGaN/GaN HEMTsKeyu Ji, Xiao Cui, Jiwei Chen, et al.
Molecules (Basel, Switzerland)|March 27, 2025
Improvement of GaN-Based Device Performance by Plasma-Enhanced Chemical Vapor Deposition (PECVD) Directly Preparing h-BN with Excellent Thermal Management CharacteristicsYi Peng, Lingyun Liu, Qingfeng Xu, et al.
Sheng Wu Yi Xue Gong Cheng Xue Za Zhi = Journal of Biomedical Engineering = Shengwu Yixue Gongchengxue Zazhi|July 10, 2008
[Preliminary design for a VI system combining the voice acoustic analyzing and glottal image analyzing]Yan Pan, Yan Liu, Xiaolan Cai, et al.
Frontiers in Genetics|March 8, 2019
LncRNAs GIHCG and SPINT1-AS1 Are Crucial Factors for Pan-Cancer Cells Sensitivity to LapatinibZhen Xiang, Shuzheng Song, Zhenggang Zhu, et al.
Nanomaterials (Basel, Switzerland)|February 13, 2025
Spectroscopic Ellipsometry and Correlated Studies of AlGaN-GaN HEMTs Prepared by MOCVDYanlian Yang, Yao Liu, Yaoze Li, et al.
ACS Applied Materials & Interfaces|May 16, 2022
Friction-Dominated Carrier Excitation and Transport Mechanism for GaN-Based Direct-Current Triboelectric NanogeneratorsYunkang Chen, Zhi Zhang, Zhaozheng Wang, et al.
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