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Advanced Science (Weinheim, Baden-Wurttemberg, Germany)|May 22, 2024
Toward Ideal Low-Frequency Noise in Monolayer CVD MoS<sub>2</sub> FETs: Influence of van der Waals Junctions and Sulfur Vacancy ManagementWonjun Shin, Junsung Byeon, Ryun-Han Koo, et al.Nature Communications|May 8, 2026
CMOS-compatible ferroelectric tunnel junctions integrate stochastic sampling and deterministic computing for image generationRyun-Han Koo, Jonghyun Ko, Wonjun Shin, et al.Advanced Science (Weinheim, Baden-Wurttemberg, Germany)|September 26, 2024
Polarization Pruning: Reliability Enhancement of Hafnia-Based Ferroelectric Devices for Memory and Neuromorphic ComputingRyun-Han Koo, Wonjun Shin, Jangsaeng Kim, et al.Nature Communications|October 23, 2024
Analog reservoir computing via ferroelectric mixed phase boundary transistorsJangsaeng Kim, Eun Chan Park, Wonjun Shin, et al.Nano Convergence|August 29, 2025
Physical correlation between stochasticity and process-induced damage in ferroelectric memory devicesRyun-Han Koo, Seungwhan Kim, Jiseong Im, et al.Materials Horizons|April 29, 2022
Synergistic improvement of sensing performance in ferroelectric transistor gas sensors using remnant polarizationWonjun Shin, Jiyong Yim, Jong-Ho Bae, et al.Advanced Science (Weinheim, Baden-Wurttemberg, Germany)|May 30, 2025
Artificial Room-Temperature Ferromagnetism of Bulk van der Waals VSe<sub>2</sub>Jinhyoung Lee, Gunhyoung Kim, Hyunho Seok, et al.Nature Communications|May 21, 2026
Hybrid ferroelectric-ionic memristive hardware for high scalability in-memory computingJeong-Han Kim, Wonjun Shin, Ryun-Han Koo, et al.Journal of Physics. Condensed Matter : an Institute of Physics Journal|April 1, 2021
Gas sensing materials roadmapHuaping Wang, Jianmin Ma, Jun Zhang, et al.Pageof 5