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Woonggi Hong

Showing results (1-10 of 17) with videos related to

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Materials (Basel, Switzerland)|October 29, 2025
Scalable Graphene-MoS<sub>2</sub> Lateral Contacts for High-Performance 2D ElectronicsWoonggi Hong
ACS Nano|May 9, 2023
Plasmonic Nanoparticles on Graphene Absorber for Broadband High Responsivity 2D/3D PhotodiodeCheolmin Park, Seung Hun Han, Hyeok Jun Jin, et al.
ACS Applied Materials & Interfaces|October 18, 2021
Wafer-Scale Uniform Growth of an Atomically Thin MoS<sub>2</sub> Film with Controlled Layer Numbers by Metal-Organic Chemical Vapor DepositionWoonggi Hong, Cheolmin Park, Gi Woong Shim, et al.
Scientific Reports|February 6, 2019
Observation of Wavelength-Dependent Quantum Plasmon Tunneling with Varying the Thickness of Graphene SpacerKhang June Lee, Shinho Kim, Woonggi Hong, et al.
Advanced Materials (Deerfield Beach, Fla.)|March 17, 2020
TFT Channel Materials for Display Applications: From Amorphous Silicon to Transition Metal DichalcogenidesGi Woong Shim, Woonggi Hong, Jun-Hwe Cha, et al.
Small (Weinheim an Der Bergstrasse, Germany)|April 24, 2023
A Highly Reliable Molybdenum Disulfide-Based Synaptic Memristor Using a Copper Migration-Controlled StructureWonbae Ahn, Han Beom Jeong, Jungyeop Oh, et al.
Nanoscale|August 20, 2024
Suppression of surface optical phonon scattering by AlN interfacial layers for mobility enhancement in MoS<sub>2</sub> FETsWoonggi Hong, Gi Woong Shim, Hyeok Jun Jin, et al.
ACS Applied Materials & Interfaces|August 13, 2024
Tunable Doping Strategy for Few-Layer MoS<sub>2</sub> Field-Effect Transistors via NH<sub>3</sub> Plasma TreatmentMingu Kang, Woonggi Hong, Inseong Lee, et al.
ACS Applied Materials & Interfaces|January 13, 2026
Tailoring Synaptic Properties of the Band-Engineered Charge Trap Memory for a Flexible Edge Neuromorphic ProcessorTaehoon Kim, Jungyeop Oh, Hyeonji Lee, et al.
Nanoscale|April 15, 2025
Selective and local flash-annealing for improvement in the contact characteristics of MoS<sub>2</sub> transistorsJun-Hwe Cha, Inseong Lee, Seol Won Yun, et al.
Pageof 2

Showing results (1-10 of 17) with videos related to

Sort By:
Pageof 2
Materials (Basel, Switzerland)|October 29, 2025
Scalable Graphene-MoS<sub>2</sub> Lateral Contacts for High-Performance 2D ElectronicsWoonggi Hong
ACS Nano|May 9, 2023
Plasmonic Nanoparticles on Graphene Absorber for Broadband High Responsivity 2D/3D PhotodiodeCheolmin Park, Seung Hun Han, Hyeok Jun Jin, et al.
ACS Applied Materials & Interfaces|October 18, 2021
Wafer-Scale Uniform Growth of an Atomically Thin MoS<sub>2</sub> Film with Controlled Layer Numbers by Metal-Organic Chemical Vapor DepositionWoonggi Hong, Cheolmin Park, Gi Woong Shim, et al.
Scientific Reports|February 6, 2019
Observation of Wavelength-Dependent Quantum Plasmon Tunneling with Varying the Thickness of Graphene SpacerKhang June Lee, Shinho Kim, Woonggi Hong, et al.
Advanced Materials (Deerfield Beach, Fla.)|March 17, 2020
TFT Channel Materials for Display Applications: From Amorphous Silicon to Transition Metal DichalcogenidesGi Woong Shim, Woonggi Hong, Jun-Hwe Cha, et al.
Small (Weinheim an Der Bergstrasse, Germany)|April 24, 2023
A Highly Reliable Molybdenum Disulfide-Based Synaptic Memristor Using a Copper Migration-Controlled StructureWonbae Ahn, Han Beom Jeong, Jungyeop Oh, et al.
Nanoscale|August 20, 2024
Suppression of surface optical phonon scattering by AlN interfacial layers for mobility enhancement in MoS<sub>2</sub> FETsWoonggi Hong, Gi Woong Shim, Hyeok Jun Jin, et al.
ACS Applied Materials & Interfaces|August 13, 2024
Tunable Doping Strategy for Few-Layer MoS<sub>2</sub> Field-Effect Transistors via NH<sub>3</sub> Plasma TreatmentMingu Kang, Woonggi Hong, Inseong Lee, et al.
ACS Applied Materials & Interfaces|January 13, 2026
Tailoring Synaptic Properties of the Band-Engineered Charge Trap Memory for a Flexible Edge Neuromorphic ProcessorTaehoon Kim, Jungyeop Oh, Hyeonji Lee, et al.
Nanoscale|April 15, 2025
Selective and local flash-annealing for improvement in the contact characteristics of MoS<sub>2</sub> transistorsJun-Hwe Cha, Inseong Lee, Seol Won Yun, et al.
Pageof 2